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DC Field | Value | Language |
---|---|---|
dc.citation.number | 24 | - |
dc.citation.startPage | 241910 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 108 | - |
dc.contributor.author | Yu, Kwangnam | - |
dc.contributor.author | Kim, Jiho | - |
dc.contributor.author | Lee, Chul | - |
dc.contributor.author | Jang, A-Rang | - |
dc.contributor.author | Shin, Hyeon Suk | - |
dc.contributor.author | Kim, Keun Soo | - |
dc.contributor.author | Yu, Young-Jun | - |
dc.contributor.author | Choi, E.J. | - |
dc.date.accessioned | 2023-12-21T23:39:49Z | - |
dc.date.available | 2023-12-21T23:39:49Z | - |
dc.date.created | 2016-07-06 | - |
dc.date.issued | 2016-06 | - |
dc.description.abstract | We synthesize a series of CVD h-BN films and perform critical infrared spectroscopic characterization. For high-temperature (HT, Temp = 1400 °C) grown h-BN thin film, only E1u-mode infrared phonon is activated demonstrating highly aligned 2D h-BN planes over large area, whereas low-temperature (LT, Temp = 1000 °C) grown film shows two phonon peaks, E1u and A2u, due to stacking of h-BN plane at tilted angle. For CVD graphene transferred on HT h-BN/SiO2/Si substrate, interband transition spectrum σ1 shifts strongly to lower energy compared with that on LT h-BN/SiO2/Si and on bare SiO2/Si substrates, revealing that the residual carrier density n in graphene is suppressed by the use of HT h-BN layer. Also, the interband transition width of σ1 defined by effective temperature is reduced from 400 K for G/SiO2/Si to 300 K for HT h-BN/SiO2/Si. The behaviors of n and effective temperature show that the HT h-BN film can decouple CVD graphene from the impurity and defect of SiO2 leading to a large scale free-standing like graphene. | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.108, no.24, pp.241910 | - |
dc.identifier.doi | 10.1063/1.4954171 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.scopusid | 2-s2.0-84975266479 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/19893 | - |
dc.identifier.url | http://scitation.aip.org/content/aip/journal/apl/108/24/10.1063/1.4954171 | - |
dc.identifier.wosid | 000379037200024 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Infrared study of large scale h-BN film and graphene/h-BN heterostructure | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | HEXAGONAL BORON-NITRIDE | - |
dc.subject.keywordPlus | THERMAL-CONDUCTIVITY | - |
dc.subject.keywordPlus | HIGH-QUALITY | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | FOILS | - |
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