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Jeong, Hu Young
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Wafer-Scale and Wrinkle-Free Epitaxial Growth of Single-Orientated Multilayer Hexagonal Boron Nitride on Sapphire

Author(s)
Jang, A-RangHong, SeokmoHyun, ChoheeYoon, Seong InKim, GwangwooJeong, Hu YoungShin, Tae JooPark, Sung O.Wong, KesterKwak, Sang KyuPark, NoejungYu, KwangnamChoi, EunjipMishchenko, ArtemWithers, FreddieNovoselov, Konstantin S.Lim, HyunseobShin, Hyeon Suk
Issued Date
2016-05
DOI
10.1021/acs.nanolett.6b01051
URI
https://scholarworks.unist.ac.kr/handle/201301/19441
Fulltext
http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.6b01051
Citation
NANO LETTERS, v.16, no.5, pp.3360 - 3366
Abstract
Large-scale growth of high-quality hexagonal boron nitride has been a challenge in two-dimensional-material-based electronics. Herein, we present wafer-scale and wrinkle-free epitaxial growth of multilayer hexagonal boron nitride on a sapphire substrate by using high-temperature and low-pressure chemical vapor deposition. Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized hexagonal boron nitride has a single rotational orientation with AA' stacking order. A facile method for transferring hexagonal boron nitride onto other target substrates was developed, which provides the opportunity for using hexagonal boron nitride as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our hexagonal boron nitride sheets shows clear quantum oscillation and highly improved carrier mobility because the ultraflatness of the hexagonal boron nitride surface can reduce the substrate-induced degradation of the carrier mobility of two-dimensional materials
Publisher
AMER CHEMICAL SOC
ISSN
1530-6984
Keyword (Author)
Hexagonal boron nitridechemical vapor depositionammonia boranesapphire substrate
Keyword
CHEMICAL-VAPOR-DEPOSITIONFIELD-EFFECT TRANSISTORSLARGE-AREAHIGH-QUALITYGRAPHENE ELECTRONICSMONOLAYERFILMSWS2MOS2FOIL

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