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김건호

Kim, Gun-Ho
SoftHeat Lab.
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dc.citation.endPage 093303 -
dc.citation.number 9 -
dc.citation.startPage 093303 -
dc.citation.title APPLIED PHYSICS LETTERS -
dc.citation.volume 98 -
dc.contributor.author Kim, Gun-Ho -
dc.contributor.author Shtein, Max -
dc.contributor.author Pipe, Kevin -
dc.date.accessioned 2023-12-22T06:15:00Z -
dc.date.available 2023-12-22T06:15:00Z -
dc.date.created 2016-05-19 -
dc.date.issued 2011-03 -
dc.description.abstract Low-noise thermoelectric and electrical measurements were used to derive the dependences of Seebeck coefficient and hole mobility on carrier concentration and grain size in the "bulk" regions of thermally evaporated pentacene thin films (in contrast to the channel field-effect mobility typically measured using thin-film transistor geometries). Distinct charge transport regimes were observed for larger (0.5 and 0.8 μm) and smaller (0.2 μm) grain sizes, attributed to carrier-dopant scattering and percolation, respectively. -
dc.identifier.bibliographicCitation APPLIED PHYSICS LETTERS, v.98, no.9, pp.093303 - 093303 -
dc.identifier.doi 10.1063/1.3556622 -
dc.identifier.issn 0003-6951 -
dc.identifier.scopusid 2-s2.0-79952386388 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/19204 -
dc.identifier.url http://scitation.aip.org/content/aip/journal/apl/98/9/10.1063/1.3556622 -
dc.identifier.wosid 000288026700082 -
dc.language 영어 -
dc.publisher AMER INST PHYSICS -
dc.title Thermoelectric and bulk mobility measurements in pentacene thin films -
dc.type Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -

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