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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 4757 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 4753 | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 16 | - |
dc.contributor.author | Jeong, Jae Won | - |
dc.contributor.author | Jang, E-San | - |
dc.contributor.author | Shin, Sunhae | - |
dc.contributor.author | Kim, Kyung Rok | - |
dc.date.accessioned | 2023-12-21T23:45:21Z | - |
dc.date.available | 2023-12-21T23:45:21Z | - |
dc.date.created | 2016-05-09 | - |
dc.date.issued | 2016-05 | - |
dc.description.abstract | We propose a novel double-peak negative differential resistance (NDR) characteristic at the conventional single-peak MOS-NDR circuit by employing ambipolar behavior of TFET. The fluctuated voltage transfer curve (VTC) from ambipolar inverter is analyzed with simple model and successfully demonstrated with TFET, as a practical example, on the device simulation. We also verified that the fluctuated VTC generates additional peak and valleys on NDR characteristics by using circuit simulations. Moreover, by adjusting the threshold voltage of conventional MOSFET, ultra-high 1st and 2nd peak-to-valley current ratio (PVCR) over 107 is obtained with fully suppressed valley currents. The proposed double-peak NDR circuit expected to apply on faster switching and low power multi-functional applications. | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.5, pp.4753 - 4757 | - |
dc.identifier.doi | 10.1166/jnn.2016.12242 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.scopusid | 2-s2.0-84971216341 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/19124 | - |
dc.identifier.url | http://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000005/art00074 | - |
dc.identifier.wosid | 000386123100074 | - |
dc.language | 영어 | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Multiple Negative Differential Resistance Device by Using the Ambipolar Behavior of Tunneling Field Effect Transistor with Fast Switching Characteristics | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Negative Differential Resistance (NOR) | - |
dc.subject.keywordAuthor | Tunneling Field Effect Transistor (TFET) | - |
dc.subject.keywordAuthor | Peak-to-Valley Current Ratio (PVCR) | - |
dc.subject.keywordAuthor | Tunneling | - |
dc.subject.keywordAuthor | Ambipolar | - |
dc.subject.keywordAuthor | Multipeak | - |
dc.subject.keywordPlus | NDR | - |
dc.subject.keywordPlus | CIRCUITS | - |
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