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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 895 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 889 | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 68 | - |
dc.contributor.author | Chae, Gil Jo | - |
dc.contributor.author | Kim, Kang Dae | - |
dc.contributor.author | Cho, Shinuk | - |
dc.contributor.author | Walker, Bright James | - |
dc.contributor.author | Seo, Jung Hwa | - |
dc.date.accessioned | 2023-12-21T23:50:14Z | - |
dc.date.available | 2023-12-21T23:50:14Z | - |
dc.date.created | 2016-05-03 | - |
dc.date.issued | 2016-04 | - |
dc.description.abstract | Organic-inorganic hybrid bipolar field-effect transistors (HBFETs) comprising a layer of p-type organic poly(3-hexylthiophene) (P3HT) separated from a parallel layer of n-type inorganic zinc oxide (ZnO) were demonstrated by solution processing. In order to achieve balanced hole and electron mobilities, we initially optimized the hole-transporting P3HT channel by the addition of the polar non-solvent acetonitrile (AN) to P3HT solutions in chloroform, which induced a selfassembled nano-fibril morphology and an enhancement of hole mobilities. For the electron channel, a wet-chemically-prepared ZnO layer was optimized by thermal annealing. Unipolar P3HT FET with 5% AN exhibited the highest hole mobility of 7.20 x 10(-2) cm(2)V(-1)s(-1) while the highest electron mobility (3.64 x 10(-2) cm(2)V(-1)s(-1)) was observed in unipolar ZnO FETs annealed at 200A degrees C. The organic-inorganic HBFETs consisting of the P3HT layer with 5% AN and ZnO annealed at 200A degrees C exhibited well-balanced hole and electron mobilities of 1.94 x 10(-2) cm(2)V(-1)s(-1) and 1.98 x 10(-2) cm(2)V(-1)s(-1), respectively. | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.68, no.7, pp.889 - 895 | - |
dc.identifier.doi | 10.3938/jkps.68.889 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.scopusid | 2-s2.0-84962868878 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/19099 | - |
dc.identifier.url | http://link.springer.com/article/10.3938%2Fjkps.68.889 | - |
dc.identifier.wosid | 000374159100010 | - |
dc.language | 영어 | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Solution-processible organic-inorganic hybrid bipolar field-effect transistors | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.identifier.kciid | ART002100120 | - |
dc.relation.journalResearchArea | Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.subject.keywordAuthor | Carrier mobility | - |
dc.subject.keywordAuthor | Organic semiconductors | - |
dc.subject.keywordAuthor | Transistors | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | ZNO NANOPARTICLES | - |
dc.subject.keywordPlus | ZINC-OXIDE | - |
dc.subject.keywordPlus | AMBIPOLAR | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | INVERTERS | - |
dc.subject.keywordPlus | POLYMER | - |
dc.subject.keywordPlus | CHANNEL | - |
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