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DC Field | Value | Language |
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dc.citation.endPage | 10412 | - |
dc.citation.number | 16 | - |
dc.citation.startPage | 10403 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 8 | - |
dc.contributor.author | Heo, Jae Sang | - |
dc.contributor.author | Jo, Jeong-Wan | - |
dc.contributor.author | Kang, Jingu | - |
dc.contributor.author | Jeong, Chan-Yong | - |
dc.contributor.author | Jeong, Hu Young | - |
dc.contributor.author | Kim, Sung Kyu | - |
dc.contributor.author | Kim, Kwanpyo | - |
dc.contributor.author | Kwon, Hyuck-In | - |
dc.contributor.author | Kim, Jaekyun | - |
dc.contributor.author | Kim, Yong-Hoon | - |
dc.contributor.author | Kim, Myung-Gil | - |
dc.contributor.author | Park, Sung Kyu | - |
dc.date.accessioned | 2023-12-22T00:06:23Z | - |
dc.date.available | 2023-12-22T00:06:23Z | - |
dc.date.created | 2016-04-28 | - |
dc.date.issued | 2016-04 | - |
dc.description.abstract | The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal oxygen metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal oxygen metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 degrees C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 X 10(9), subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm(2) s(-1), and a bias stability of Delta V-TH < 2.5 V), which show more than a 30% improvement over the simple DUV-treated a-IGZO TFTs. | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.8, no.16, pp.10403 - 10412 | - |
dc.identifier.doi | 10.1021/acsami.5b12819 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.scopusid | 2-s2.0-84966356378 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/19067 | - |
dc.identifier.url | http://pubs.acs.org/doi/abs/10.1021/acsami.5b12819 | - |
dc.identifier.wosid | 000375245100039 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics; Materials Science | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | solution-processed metal oxides | - |
dc.subject.keywordAuthor | water treatment | - |
dc.subject.keywordAuthor | DUV irradiation | - |
dc.subject.keywordAuthor | low temperature | - |
dc.subject.keywordAuthor | thin-film transistors | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | DENSITY-OF-STATES | - |
dc.subject.keywordPlus | GA-ZN-O | - |
dc.subject.keywordPlus | ZINC-OXIDE | - |
dc.subject.keywordPlus | SOL-GEL | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.subject.keywordPlus | DEGREES-C | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | ELECTRONICS | - |
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