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DC Field | Value | Language |
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dc.citation.number | 3 | - |
dc.citation.startPage | 032406 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 108 | - |
dc.contributor.author | Lee, Jeong-Hyeon | - |
dc.contributor.author | He, Shumin | - |
dc.contributor.author | Grünberg, Peter | - |
dc.contributor.author | Jin, Mi-Jin | - |
dc.contributor.author | Yoo, Jung-Woo | - |
dc.contributor.author | Cho, Beongki | - |
dc.date.accessioned | 2023-12-22T00:13:15Z | - |
dc.date.available | 2023-12-22T00:13:15Z | - |
dc.date.created | 2016-04-05 | - |
dc.date.issued | 2016-01 | - |
dc.description.abstract | We performed three-terminal (3T) Hanle measurement for two types of sample series, CoFe/SiO2/n+-Si and Cu/SiO2/n+-Si, with various tunnel resistances. Clear Hanle signal and anomalous scaling between spin resistance-area product and tunnel resistance-area product were observed in CoFe/SiO2/n+-Si devices. In order to explore the origin of the Hanle signal and the impurity-assisted tunneling effect on the Hanle signal in our devices, Hanle measurement in Cu/SiO2/n+-Si devices was performed as well. However, no detectable Hanle signal was observed in Cu/SiO2/n+-Si, even though a lot of samples with various tunnel resistances were studied in wide temperature and bias voltage ranges. Through a comparative study, it is found that the impurity-assisted tunneling magnetoresistance mechanism would not play a dominant role in the 3T Hanle signal in CoFe/SiO2/n+-Si tunnel junctions, where the SiO2 was formed by plasma oxidation to minimize impurities. | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.108, no.3, pp.032406 | - |
dc.identifier.doi | 10.1063/1.4940120 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.scopusid | 2-s2.0-84961366812 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/18926 | - |
dc.identifier.url | http://scitation.aip.org/content/aip/journal/apl/108/3/10.1063/1.4940120 | - |
dc.identifier.wosid | 000373055500032 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | A comparative study of three-terminal Hanle signals in CoFe/SiO2/n+-Si and Cu/SiO2/n+-Si tunnel junctions | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | SPIN-ACCUMULATION | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | INJECTION | - |
dc.subject.keywordPlus | POLARIZATION | - |
dc.subject.keywordPlus | SPINTRONICS | - |
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