There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.endPage | E57 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | E54 | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 10 | - |
dc.contributor.author | Bae, Insung | - |
dc.contributor.author | Kang, Seok Ju | - |
dc.contributor.author | Park, Youn Jung | - |
dc.contributor.author | Furukawa, T. | - |
dc.contributor.author | Park, Cheolmin | - |
dc.date.accessioned | 2023-12-22T07:36:06Z | - |
dc.date.available | 2023-12-22T07:36:06Z | - |
dc.date.created | 2015-08-21 | - |
dc.date.issued | 2010-01 | - |
dc.description.abstract | Among the many ferroelectrics polymers, poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)] has drawn a great attention with its promising memory properties such as large remanent polarization, good fatigue and retention properties. Since the ferroelectric layer plays a critical role in the operation of memory device, it is important to control the structure of ferroelectric thin film. In order to improve the performance of a ferroelectric device, in this contribution we employed P(VDF-TrFE) layers blended with various compositions of an amorphous poly(methyl methacrylate) (PMMA) from 0 wt.% to 20 wt.%. In metal/ferroelectric/metal capacitor structure, we observed the decrease of remanent polarization from 9.13 mu C/cm(2) to 4.7 mu C/cm(2) and increase of coercive voltage from 9.5 V to 15.2 V with PMMA. Polarization switching time of the ferroelectric blend films estimated from the switched polarization vs. time curves increases with the amount of PMMA. Furthermore, ferroelectric field-effect transistors (FeFETs) based on ferroelectric P(VDF-TrFE) and PMMA blend films with single-crystalline tri-isopropylsilylethynyl pentacene (TIPS-PEN) channels show that both ON and OFF currents of the transistors are maintained with the PMMA contents despite the reduction of remanent polarization of P(VDF-TrFE)/PMMA films. (C) 2009 Elsevier B.V. All rights reserved | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.10, no.1, pp.E54 - E57 | - |
dc.identifier.doi | 10.1016/j.cap.2009.12.013 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.scopusid | 2-s2.0-77649237922 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/18478 | - |
dc.identifier.url | http://www.sciencedirect.com/science/article/pii/S1567173909006002 | - |
dc.identifier.wosid | 000278635400014 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Organicferroelectric field-effect transistor with P(VDF-TrFE)/PMMA blend thin films for non-volatile memory applications | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.