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Lee, Zonghoon
Atomic-Scale Electron Microscopy (ASEM) Lab
Research Interests
  • Advanced Transmission Electron Microscopy (TEM/STEM), in Situ TEM, graphene, 2D materials, low-dimensional crystals, nanostructured materials

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Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides

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dc.contributor.author Kim, Youngjun ko
dc.contributor.author Song, Jeong-Gyu ko
dc.contributor.author Park, Yong Ju ko
dc.contributor.author Ryu, Gyeong Hee ko
dc.contributor.author Lee, Su Jeong ko
dc.contributor.author Kim, Jin Sung ko
dc.contributor.author Jeon, Pyo Jin ko
dc.contributor.author Lee, Chang Wan ko
dc.contributor.author Woo, Whang Je ko
dc.contributor.author Choi, Taejin ko
dc.contributor.author Jung, Hanearl ko
dc.contributor.author Lee, Han-Bo-Ram ko
dc.contributor.author Myoung, Jae-Min ko
dc.contributor.author Im, Seongil ko
dc.contributor.author Lee, Zonghoon ko
dc.contributor.author Ahn, Jong-Hyun ko
dc.contributor.author Park, Jusang ko
dc.contributor.author Kim, Hyungjun ko
dc.date.available 2016-01-27T02:43:41Z -
dc.date.created 2016-01-26 ko
dc.date.issued 2016-01 ko
dc.identifier.citation SCIENTIFIC REPORTS, v.6, pp.18754 ko
dc.identifier.issn 2045-2322 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/18223 -
dc.description.abstract This work reports the self-limiting synthesis of an atomically thin, two dimensional transition metal dichalcogenides (2D TMDCs) in the form of MoS2. The layer controllability and large area uniformity essential for electronic and optical device applications is achieved through atomic layer deposition in what is named self-limiting layer synthesis (SLS); a process in which the number of layers is determined by temperature rather than process cycles due to the chemically inactive nature of 2D MoS2. Through spectroscopic and microscopic investigation it is demonstrated that SLS is capable of producing MoS2 with a wafer-scale (similar to 10 cm) layer-number uniformity of more than 90%, which when used as the active layer in a top-gated field-effect transistor, produces an on/off ratio as high as 10(8). This process is also shown to be applicable to WSe2, with a PN diode fabricated from a MoS2/WSe2 heterostructure exhibiting gate-tunable rectifying characteristics. ko
dc.description.statementofresponsibility open -
dc.language 영어 ko
dc.publisher NATURE PUBLISHING GROUP ko
dc.title Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-84952931760 ko
dc.identifier.wosid 000386072600001 ko
dc.type.rims ART ko
dc.identifier.doi 10.1038/srep18754 ko
dc.identifier.url http://www.nature.com/articles/srep18754 ko
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