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Lee, Zonghoon
Atomic-Scale Electron Microscopy (ASEM) Lab
Research Interests
  • Advanced Transmission Electron Microscopy (TEM/STEM), in Situ TEM, graphene, 2D materials, low-dimensional crystals, nanostructured materials


Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides

DC Field Value Language Kim, Youngjun ko Song, Jeong-Gyu ko Park, Yong Ju ko Ryu, Gyeong Hee ko Lee, Su Jeong ko Kim, Jin Sung ko Jeon, Pyo Jin ko Lee, Chang Wan ko Woo, Whang Je ko Choi, Taejin ko Jung, Hanearl ko Lee, Han-Bo-Ram ko Myoung, Jae-Min ko Im, Seongil ko Lee, Zonghoon ko Ahn, Jong-Hyun ko Park, Jusang ko Kim, Hyungjun ko 2016-01-27T02:43:41Z - 2016-01-26 ko 2016-01 ko
dc.identifier.citation SCIENTIFIC REPORTS, v.6, pp.18754 ko
dc.identifier.issn 2045-2322 ko
dc.identifier.uri -
dc.description.abstract This work reports the self-limiting synthesis of an atomically thin, two dimensional transition metal dichalcogenides (2D TMDCs) in the form of MoS2. The layer controllability and large area uniformity essential for electronic and optical device applications is achieved through atomic layer deposition in what is named self-limiting layer synthesis (SLS); a process in which the number of layers is determined by temperature rather than process cycles due to the chemically inactive nature of 2D MoS2. Through spectroscopic and microscopic investigation it is demonstrated that SLS is capable of producing MoS2 with a wafer-scale (similar to 10 cm) layer-number uniformity of more than 90%, which when used as the active layer in a top-gated field-effect transistor, produces an on/off ratio as high as 10(8). This process is also shown to be applicable to WSe2, with a PN diode fabricated from a MoS2/WSe2 heterostructure exhibiting gate-tunable rectifying characteristics. ko
dc.description.statementofresponsibility open -
dc.language 영어 ko
dc.title Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-84952931760 ko
dc.identifier.wosid 000386072600001 ko
dc.type.rims ART ko
dc.identifier.doi 10.1038/srep18754 ko
dc.identifier.url ko
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