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Lee, Zonghoon
Atomic-Scale Electron Microscopy (ASEM) Lab
Research Interests
  • Advanced Transmission Electron Microscopy (TEM/STEM), in Situ TEM, graphene, 2D materials, low-dimensional crystals, nanostructured materials

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Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides

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Title
Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides
Author
Kim, YoungjunSong, Jeong-GyuPark, Yong JuRyu, Gyeong HeeLee, Su JeongKim, Jin SungJeon, Pyo JinLee, Chang WanWoo, Whang JeChoi, TaejinJung, HanearlLee, Han-Bo-RamMyoung, Jae-MinIm, SeongilLee, ZonghoonAhn, Jong-HyunPark, JusangKim, Hyungjun
Issue Date
2016-01
Publisher
NATURE PUBLISHING GROUP
Citation
SCIENTIFIC REPORTS, v.6, pp.18754
Abstract
This work reports the self-limiting synthesis of an atomically thin, two dimensional transition metal dichalcogenides (2D TMDCs) in the form of MoS2. The layer controllability and large area uniformity essential for electronic and optical device applications is achieved through atomic layer deposition in what is named self-limiting layer synthesis (SLS); a process in which the number of layers is determined by temperature rather than process cycles due to the chemically inactive nature of 2D MoS2. Through spectroscopic and microscopic investigation it is demonstrated that SLS is capable of producing MoS2 with a wafer-scale (similar to 10 cm) layer-number uniformity of more than 90%, which when used as the active layer in a top-gated field-effect transistor, produces an on/off ratio as high as 10(8). This process is also shown to be applicable to WSe2, with a PN diode fabricated from a MoS2/WSe2 heterostructure exhibiting gate-tunable rectifying characteristics.
URI
https://scholarworks.unist.ac.kr/handle/201301/18223
URL
http://www.nature.com/articles/srep18754
DOI
10.1038/srep18754
ISSN
2045-2322
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MSE_Journal Papers
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