BROWSE

Related Researcher

Author's Photo

Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application

ITEM VIEW & DOWNLOAD

Direct Observation of Conducting Nanofilaments in Graphene-Oxide-Resistive Switching Memory

Cited 0 times inthomson ciCited 0 times inthomson ci
Title
Direct Observation of Conducting Nanofilaments in Graphene-Oxide-Resistive Switching Memory
Author
Kim, Sung KyuKim, Jong YoonChoi, Sung-YoolLee, Jeong YongJeong, Hu Young
Issue Date
2015-11
Publisher
WILEY-V C H VERLAG GMBH
Citation
ADVANCED FUNCTIONAL MATERIALS, v.25, no.43, pp.6710 - 6715
Abstract
Determining the presence of conducting filaments in resistive random access memory with nanoscale thin films is vital to unraveling resistive switching mechanisms. Bistable resistive switching within graphene-oxide (GO)-based resistive memory devices, recently developed by many research groups, has been generally explained by the formation and rupture of conducting filaments induced by the diffusion of metal or oxygen ions. Using a low-voltage spherical aberration-corrected transmission electron microscopy (TEM), we directly observe metallic nanofilaments formed at the amorphous top interface layer with the application of external voltages in an Al/GO/Al memory system. Atomic-resolution TEM images acquired at an acceleration voltage of 80 kV clearly show that the conducting nanofilaments are composed of nanosized aluminum crystalline within the amorphous top interface layer after applying a negative bias (ON state). Simultaneously, we observe the change in the crystallinity of GO films by the back-diffusion of oxygen ions. The oxygen-deficient regions are clearly confirmed by energy-filtered TEM oxygen elemental mapping. This work could provide strong evidence to confirm the resistive switching mechanism previously suggested by our group.
URI
https://scholarworks.unist.ac.kr/handle/201301/18116
URL
http://onlinelibrary.wiley.com/doi/10.1002/adfm.201502734/abstract
DOI
10.1002/adfm.201502734
ISSN
1616-301X
Appears in Collections:
UCRF_Journal Papers
Files in This Item:
There are no files associated with this item.

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qrcode

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU