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Jeong, Hu Young
UCRF Electron Microscopy group
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Direct Observation of Conducting Nanofilaments in Graphene-Oxide-Resistive Switching Memory

Author(s)
Kim, Sung KyuKim, Jong YoonChoi, Sung-YoolLee, Jeong YongJeong, Hu Young
Issued Date
2015-11
DOI
10.1002/adfm.201502734
URI
https://scholarworks.unist.ac.kr/handle/201301/18116
Fulltext
http://onlinelibrary.wiley.com/doi/10.1002/adfm.201502734/abstract
Citation
ADVANCED FUNCTIONAL MATERIALS, v.25, no.43, pp.6710 - 6715
Abstract
Determining the presence of conducting filaments in resistive random access memory with nanoscale thin films is vital to unraveling resistive switching mechanisms. Bistable resistive switching within graphene-oxide (GO)-based resistive memory devices, recently developed by many research groups, has been generally explained by the formation and rupture of conducting filaments induced by the diffusion of metal or oxygen ions. Using a low-voltage spherical aberration-corrected transmission electron microscopy (TEM), we directly observe metallic nanofilaments formed at the amorphous top interface layer with the application of external voltages in an Al/GO/Al memory system. Atomic-resolution TEM images acquired at an acceleration voltage of 80 kV clearly show that the conducting nanofilaments are composed of nanosized aluminum crystalline within the amorphous top interface layer after applying a negative bias (ON state). Simultaneously, we observe the change in the crystallinity of GO films by the back-diffusion of oxygen ions. The oxygen-deficient regions are clearly confirmed by energy-filtered TEM oxygen elemental mapping. This work could provide strong evidence to confirm the resistive switching mechanism previously suggested by our group.
Publisher
WILEY-V C H VERLAG GMBH
ISSN
1616-301X
Keyword
TRANSITIONDEVICES

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