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dc.citation.endPage 470 -
dc.citation.number 4 -
dc.citation.startPage 462 -
dc.citation.title JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE -
dc.citation.volume 15 -
dc.contributor.author Ryu, Myunghwan -
dc.contributor.author Kim, Youngmin -
dc.date.accessioned 2023-12-22T00:49:20Z -
dc.date.available 2023-12-22T00:49:20Z -
dc.date.created 2016-01-04 -
dc.date.issued 2015-08 -
dc.description.abstract In this study, we analyze the impacts of the trapezoidal fin shape of a double-gate FinFET on the electrical characteristics of circuits. The trapezoidal nature of a fin body is generated by varying the angle of the sidewall of the FinFET. A technology computer-aided-design (TCAD) simulation shows that the on-state current increases, and the capacitance becomes larger, as the bottom fin width increases. Several circuit performance metrics for both digital and analog circuits, such as the fan-out 4 (FO4) delay, ring oscillator (RO) frequency, and cut-off frequency, are evaluated with mixed-mode simulations using the 3D TCAD tool. The trapezoidal nature of the FinFET results in different effects on the driving current and gate capacitance. As a result, the propagation delay of an inverter decreases as the angle increases because of the higher on-current, and the FO4 speed and RO frequency increase as the angle increases but decrease for wider angles because of the higher impact on the capacitance rather than the driving strength. Finally, the simulation reveals that the trapezoidal angle range from 10 degrees to 20 degrees is a good tradeoff between larger on-current and higher capacitance for an optimum trapezoidal FinFET shape -
dc.identifier.bibliographicCitation JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.15, no.4, pp.462 - 470 -
dc.identifier.doi 10.5573/JSTS.2015.15.4.462 -
dc.identifier.issn 1598-1657 -
dc.identifier.scopusid 2-s2.0-84941102708 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/18024 -
dc.identifier.url http://koreascience.or.kr/article/ArticleFullRecord.jsp?cn=E1STAN_2015_v15n4_462 -
dc.identifier.wosid 000366061300005 -
dc.language 영어 -
dc.publisher IEEK PUBLICATION CENTER -
dc.title Impacts of Trapezoidal Fin of 20-nm Double-Gate FinFET on the Electrical Characteristics of Circuits -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Engineering, Electrical & Electronic; Physics, Applied -
dc.relation.journalResearchArea Engineering; Physics -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor FinFET -
dc.subject.keywordAuthor trapezoidal fin shape -
dc.subject.keywordAuthor multi-gate transistor -
dc.subject.keywordAuthor double gate -
dc.subject.keywordAuthor SOI FinFET -
dc.subject.keywordAuthor mixed-mode 3D TCAD -
dc.subject.keywordPlus MOBILITY MODEL -
dc.subject.keywordPlus SIMULATION -
dc.subject.keywordPlus SILICON -

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