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DC Field | Value | Language |
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dc.citation.endPage | 18146 | - |
dc.citation.number | 43 | - |
dc.citation.startPage | 18138 | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 7 | - |
dc.contributor.author | Park, Ji-Hoon | - |
dc.contributor.author | Lim, Taekyung | - |
dc.contributor.author | Baik, Jaeyoon | - |
dc.contributor.author | Seo, Keumyoung | - |
dc.contributor.author | Moon, Youngkwon | - |
dc.contributor.author | Park, Noejung | - |
dc.contributor.author | Shin, Hyun-Joon | - |
dc.contributor.author | Kwak, Sang Kyu | - |
dc.contributor.author | Ju, Sanghyun | - |
dc.contributor.author | Ahn, Joung Real | - |
dc.date.accessioned | 2023-12-22T00:37:53Z | - |
dc.date.available | 2023-12-22T00:37:53Z | - |
dc.date.created | 2015-11-05 | - |
dc.date.issued | 2015-11 | - |
dc.description.abstract | Graphene has been used as an electrode and channel material in electronic devices because of its superior physical properties. Recently, electronic devices have changed from a planar to a complicated three-dimensional (3D) geometry to overcome the limitations of planar devices. The evolution of electronic devices requires that graphene be adaptable to a 3D substrate. Here, we demonstrate that chemical-vapor-deposited single-layer graphene can be transferred onto a silicon dioxide substrate with a 3D geometry, such as a concave-convex architecture. A variety of silicon dioxide concave-convex architectures were uniformly and seamlessly laminated with graphene using a thermal treatment. The planar graphene was stretched to cover the concave-convex architecture, and the resulting strain on the curved graphene was spatially resolved by confocal Raman spectroscopy; molecular dynamic simulations were also conducted and supported the observations. Changes in electrical resistivity caused by the spatially varying strain induced as the graphene-silicon dioxide laminate varies dimensionally from 2D to 3D were measured by using a four-point probe. The resistivity measurements suggest that the electrical resistivity can be systematically controlled by the 3D geometry of the graphene-silicon dioxide laminate. This 3D graphene-insulator laminate will broaden the range of graphene applications beyond planar structures to 3D materials. | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.7, no.43, pp.18138 - 18146 | - |
dc.identifier.doi | 10.1039/C5NR04004C | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.scopusid | 2-s2.0-84946148304 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/17710 | - |
dc.identifier.url | http://pubs.rsc.org/en/Content/ArticleLanding/2015/NR/C5NR04004C#!divAbstract | - |
dc.identifier.wosid | 000364048900020 | - |
dc.language | 영어 | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Seamless lamination of a concave-convex architecture with single-layer graphene | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | RAMAN-SPECTROSCOPY | - |
dc.subject.keywordPlus | BIAXIAL STRAIN | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | MEMBRANES | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | CARBON | - |
dc.subject.keywordPlus | PHASE | - |
dc.subject.keywordPlus | FILMS | - |
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