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Noh, Sam H.
NECSST(Next-generation Embedded/Computer System Software Technology) Lab
Research Interests
  • Operating system, flash memory, SSD, persistent memory

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Space-efficient flash translation layer for CompactFlash systems

DC Field Value Language
dc.contributor.author Kim, Jesung ko
dc.contributor.author Kim, Jong Min ko
dc.contributor.author Noh, Sam H. ko
dc.contributor.author Min, Sang Lyul ko
dc.contributor.author Cho, Yookun ko
dc.date.available 2015-10-12T07:25:51Z -
dc.date.created 2015-10-12 ko
dc.date.issued 2002-05 -
dc.identifier.citation IEEE TRANSACTIONS ON CONSUMER ELECTRONICS, v.48, no.2, pp.366 - 375 ko
dc.identifier.issn 0098-3063 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/17387 -
dc.identifier.uri http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1010143 ko
dc.description.abstract Flash memory is becoming increasingly important as nonvolatile storage for mobile consumer electronics due to its low power consumption and shock resistance. However, it imposes technical challenges in that a write should be preceded by an erase operation, and that this erase operation can be performed only in a unit much larger than the write unit. To address these technical hurdles, an intermediate software layer called a flash translation layer (FTL) is generally employed to redirect logical addresses from the host system to physical addresses in flash memory. Previous approaches have performed this address translation at the granularity of either a write unit (page) or an erase unit (block). In this paper, we propose a novel FTL design that combines the two different granularities in address translation. This is motivated by the idea that coarse grain address translation lowers resources required to maintain translation information, which is crucial in mobile consumer products for cost and power consumption reasons, while fine grain address translation is efficient in handling small size writes. Performance evaluation based on trace-driven simulation shows that the proposed scheme significantly outperforms previously proposed approaches. ko
dc.description.statementofresponsibility close -
dc.language ENG ko
dc.publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC ko
dc.subject flash memory ko
dc.subject NAND-type flash memory ko
dc.subject FTL ko
dc.subject CompactFlash ko
dc.subject address translation ko
dc.title Space-efficient flash translation layer for CompactFlash systems ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-0036564365 ko
dc.identifier.wosid 000176465900022 ko
dc.type.rims ART ko
dc.description.wostc 240 *
dc.description.scopustc 431 *
dc.description.scopustc 431 *
dc.date.tcdate 2015-12-28 *
dc.date.scptcdate 2015-11-04 *
dc.date.scptcdate 2015-11-04 *
dc.identifier.doi 10.1109/TCE.2002.1010143 ko
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