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Shin, Tae Joo
UNIST Synchrotron Radiation Research Laboratory
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Self-Assembled, Millimeter-Sized TIPS-Pentacene Spherulites Grown on Partially Crosslinked Polymer Gate Dielectric

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Title
Self-Assembled, Millimeter-Sized TIPS-Pentacene Spherulites Grown on Partially Crosslinked Polymer Gate Dielectric
Author
Yoo, HocheonChoi, Hyun HoShin, Tae JooRim, TaiukCho, KilwonJung, SungjuneKim, Jae-Joon
Issue Date
2015-06
Publisher
WILEY-V C H VERLAG GMBH
Citation
ADVANCED FUNCTIONAL MATERIALS, v.25, no.24, pp.3658 - 3665
Abstract
Here, a highly crystalline and self-assembled 6,13-bis(triisopropylsilyleth ynyl) pentacene (TIPS-Pentacene) thin films formed by simple spin-coating for the fabrication of high-performance solution-processed organic field-effect transistors (OFETs) are reported. Rather than using semiconducting organic small-molecule-insulating polymer blends for an active layer of an organic transistor, TIPS-Pentacene organic semiconductor is separately self-assembled on partially crosslinked poly-4-vinylphenol:poly(melamine-co-formaldehyde) (PVP:PMF) gate dielectric, which results in a vertically segregated semiconductor-dielectric film with millimeter-sized spherulite-crystalline morphology of TIPS-Pentacene. The structural and electrical properties of TIPS-Pentacene/PVP:PMF films have been studied using a combination of polarized optical microscopy, atomic force microscopy, 2D-grazing incidence wide-angle X-ray scattering, and secondary ion mass spectrometry. It is finally demonstrated a high-performance OFETs with a maximum hole mobility of 3.40 cm(2) V-1 s(-1) which is, to the best of our knowledge, one of the highest mobility values for TIPS-Pentacene OFETs fabricated using a conventional solution process. It is expected that this new deposition method would be applicable to other small molecular semiconductor-curable polymer gate dielectric systems for high-performance organic electronic applications
URI
https://scholarworks.unist.ac.kr/handle/201301/17053
URL
http://onlinelibrary.wiley.com/doi/10.1002/adfm.201501381/abstract;jsessionid=A1E6796BFB0C963A455CABE92C86D9AB.f01t04
DOI
10.1002/adfm.201501381
ISSN
1616-301X
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