dc.citation.endPage |
2013 |
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dc.citation.number |
3 |
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dc.citation.startPage |
207 |
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dc.citation.title |
센서학회지 |
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dc.citation.volume |
6 |
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dc.contributor.author |
Park, Lee Soon |
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dc.contributor.author |
Kim, Sang Tae |
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dc.contributor.author |
Koh, Kwang-Nak |
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dc.date.accessioned |
2023-12-22T12:37:27Z |
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dc.date.available |
2023-12-22T12:37:27Z |
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dc.date.created |
2015-09-21 |
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dc.date.issued |
1997-05 |
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dc.description.abstract |
FET type dissolved carbon dioxide(pCO₂) sensor with a double layer structure of hydrogel membrane and CO₂ gas permeable membrane was fabricated by utilizing a H^+ ion selective field effect transister(pH-ISFET) with Ag/AgCl reference electrode as a base chip. Formation of hydrogel membrane with photo-crosslinkable PVA-SbQ or PVP-PVAc/photosensitizer system was not suitable with the photolithographic process. Furthermore, hydrogel membrane on pH-ISFET base chip could be fabricated by photolithographic method with the aid of N,N,N`,N`-tetramethyl ethylenediamine(TED) as O₂ quencher without using polyester film as a O₂ blanket during UV irradiation process. Photosensitive urethane acrylate type oligomer was used as gas permeable membrane on top of hydrogel layer. The FET type pCO₂ sensor fabricated by photolithographic method showed good linearity (linear calibration curve) in the range of 10^(-3)∼10 mole/ℓ of dissolved CO₂ in aqueous solution with high sensitivity. |
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dc.identifier.bibliographicCitation |
센서학회지, v.6, no.3, pp.207 - 2013 |
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dc.identifier.issn |
1225-5475 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/17008 |
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dc.identifier.url |
http://kiss.kstudy.com/journal/thesis_name.asp |
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dc.language |
한국어 |
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dc.publisher |
한국센서학회 |
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dc.title |
화학센서 : 사진식각법을 이용한 FET 형 용존 CO2 센서의 수화젤막 및 가스 투과막 제작 |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
kci |
- |