dc.citation.endPage |
243 |
- |
dc.citation.number |
3 |
- |
dc.citation.startPage |
239 |
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dc.citation.title |
SENSORS AND ACTUATORS A-PHYSICAL |
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dc.citation.volume |
57 |
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dc.contributor.author |
Park, LS |
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dc.contributor.author |
Hur, YJ |
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dc.contributor.author |
Sohn, BK |
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dc.date.accessioned |
2023-12-22T12:38:23Z |
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dc.date.available |
2023-12-22T12:38:23Z |
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dc.date.created |
2015-09-18 |
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dc.date.issued |
1996-12 |
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dc.description.abstract |
An EET-type K+ -sensitive sensor with a membrane composed of a hydrophobic inner layer and a hydrophilic outer layer has been fabricated by a photolithographic process. The base chip for the sensor is a pH-ISFET with a thin Si3N4 layer. Negative photoresist (OMR-83) is used as the inner layer and poly(vinyl pyrrolidinone-co-vinyl acetate) solution in tetrahydrofuran containing valinomycin and 2,6-bis-(p-azidobenzylidene) cyclohexanone photosensitizer is used as the outer sensing membrane material. The K-ISFET sensor with double-layered membrane shows a high sensitivity (56 mV/decade) toward K+ ion, rapid response (1-2s) and low interference (less than 3mV/decade) from the competing H+ ion |
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dc.identifier.bibliographicCitation |
SENSORS AND ACTUATORS A-PHYSICAL, v.57, no.3, pp.239 - 243 |
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dc.identifier.doi |
10.1016/S0924-4247(97)80120-3 |
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dc.identifier.issn |
0924-4247 |
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dc.identifier.scopusid |
2-s2.0-0030350245 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/16991 |
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dc.identifier.url |
http://www.sciencedirect.com/science/article/pii/S0924424797801203 |
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dc.identifier.wosid |
A1996WX48300012 |
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dc.language |
영어 |
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dc.publisher |
ELSEVIER SCIENCE SA |
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dc.title |
Effect of membrane structure on the performance of field-effect transistor potassium-sensitive sensor |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scopus |
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