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dc.citation.endPage 646 -
dc.citation.startPage 638 -
dc.citation.title MOLECULAR CRYSTALS AND LIQUID CRYSTALS -
dc.citation.volume 499 -
dc.contributor.author Jung, Sang Kooun -
dc.contributor.author Lee, Sung Ho -
dc.contributor.author Lee, Yun Su -
dc.contributor.author Lee, Sang Mun -
dc.contributor.author Park, Lee Soon -
dc.contributor.author Sohn, Sang Ho -
dc.date.accessioned 2023-12-22T08:09:28Z -
dc.date.available 2023-12-22T08:09:28Z -
dc.date.created 2015-09-18 -
dc.date.issued 2009-02 -
dc.description.abstract In this study, we have tried the growth of indium tin oxide (ITO) thin films by using low frequency (60Hz) magnetron sputtering method (LFMSM). Characteristics of ITO thin films deposited at different substrate temperatures (Ts) from room temperature (RT) to 300C were investigated. The optical transmittance of more than 83% in the visible region and a resistivity of 1.710-4cm have been obtained in the films prepared at a deposition rate of 100/min. The peak to valley roughness (Rp-v) value measured by an atomic force microscopy was 4.2-7.8nm. Structural and electrical characteristics are superior in the films deposited at 250C. The sheet resistance was 11/sq for 150-nm-thick films grown at 250C. LFMSM is a way to obtain ITO films with a smooth surface, high transmittance and high electrical conductivity -
dc.identifier.bibliographicCitation MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.499, pp.638 - 646 -
dc.identifier.doi 10.1080/15421400802619719 -
dc.identifier.issn 1542-1406 -
dc.identifier.scopusid 2-s2.0-61449151975 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/16962 -
dc.identifier.url http://www.tandfonline.com/doi/abs/10.1080/15421400802619719 -
dc.identifier.wosid 000263648300036 -
dc.language 영어 -
dc.publisher TAYLOR & FRANCIS LTD -
dc.title Effects of Temperature on ITO Films Grown by Low Frequency (60Hz) Magnetron Sputtering -
dc.type Article -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus OXIDE THIN-FILMS -
dc.subject.keywordPlus INDIUM -

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