There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 4441 | - |
dc.citation.number | 22 | - |
dc.citation.startPage | 4434 | - |
dc.citation.title | CHEMISTRY OF MATERIALS | - |
dc.citation.volume | 24 | - |
dc.contributor.author | Li, H | - |
dc.contributor.author | Malliakas, CD | - |
dc.contributor.author | Liu, Z | - |
dc.contributor.author | Peters, JA | - |
dc.contributor.author | Jin, Hosub | - |
dc.contributor.author | Morris, CD | - |
dc.contributor.author | Zhao, L | - |
dc.contributor.author | Wessels, BW | - |
dc.contributor.author | Freeman, AJ | - |
dc.contributor.author | Kanatzidis, MG | - |
dc.date.accessioned | 2023-12-22T04:37:47Z | - |
dc.date.available | 2023-12-22T04:37:47Z | - |
dc.date.created | 2015-07-29 | - |
dc.date.issued | 2012-11 | - |
dc.description.abstract | The new layered compound CsHgInS3 was synthesized using solid state and flux synthesis techniques. The compound is a semiconductor and shows promising properties for X-ray and gamma-ray detection. It features a layered structure that crystallizes in the monoclinic space group C2/c with cell parameters: a = 11.2499(7) angstrom, b = 11.2565(6) angstrom, c = 22.146(1) angstrom, beta = 97.30(5)degrees, V= 2781.8(4) angstrom(3), and Z = 8. CsHgInS3 is isostructural to Rb2Cu2Sn2S6, where the Hg, In, and Cs atoms occupy the Cu, Sn, and Rb sites, respectively. Large single crystals with dimension up to 5 mm were grown with a vertical Bridgman method as well as a horizontal traveling heater method. CsHgInS3 has a gamma-ray attenuation length comparable to commercial Cd1-xZnxTe and a band gap value of 2.30 eV. The electrical resistivity of CsHgInS3 is anisotropic with values of 98 G Omega cm and 0.33 G Omega cm perpendicular and parallel to the (001) plane, respectively. The mobility-lifetime product (mu tau) of electrons and holes estimated from photoconductivity measurements on the as-grown crystals were (mu tau)(e) = 3.6 x 10(-5) cm(2) V-1 and (mu tau)(h) = 2.9 x 10(-5) cm(2) V-1, respectively. Electronic structure calculations at the Density Functional Theory level were performed based on the refined crystal structure of CsHgInS3 and show a direct gap with the conduction band near the Fermi level being highly dispersive, suggesting a relatively small carrier effective mass for electrons. | - |
dc.identifier.bibliographicCitation | CHEMISTRY OF MATERIALS, v.24, no.22, pp.4434 - 4441 | - |
dc.identifier.doi | 10.1021/cm302838v | - |
dc.identifier.issn | 0897-4756 | - |
dc.identifier.scopusid | 2-s2.0-84870155586 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/16808 | - |
dc.identifier.url | http://pubs.acs.org/doi/abs/10.1021/cm302838v | - |
dc.identifier.wosid | 000313769300022 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | CsHgInS3: a New Quaternary Semiconductor for gamma-ray Detection | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | X-ray detection | - |
dc.subject.keywordAuthor | chalcogenide | - |
dc.subject.keywordAuthor | semiconductors | - |
dc.subject.keywordAuthor | crystal growth | - |
dc.subject.keywordPlus | TRAVELING HEATER METHOD | - |
dc.subject.keywordPlus | BAND-GAP SEMICONDUCTORS | - |
dc.subject.keywordPlus | MOLTEN-SALT SYNTHESIS | - |
dc.subject.keywordPlus | CRYSTAL-GROWTH | - |
dc.subject.keywordPlus | DIMENSIONAL REDUCTION | - |
dc.subject.keywordPlus | RADIATION DETECTION | - |
dc.subject.keywordPlus | X-RAY | - |
dc.subject.keywordPlus | CDIN2S4-XSEX 1.75-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-2.75 | - |
dc.subject.keywordPlus | THERMOELECTRIC-MATERIALS | - |
dc.subject.keywordPlus | 2ND-HARMONIC GENERATION | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.