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- Jin, Hosub
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 226 | - |
| dc.citation.startPage | 222 | - |
| dc.citation.title | JOURNAL OF ELECTRONIC MATERIALS | - |
| dc.citation.volume | 44 | - |
| dc.contributor.author | Liu, Z | - |
| dc.contributor.author | Peters, JA | - |
| dc.contributor.author | Li, H | - |
| dc.contributor.author | Kanatzidis, MG | - |
| dc.contributor.author | Im, J | - |
| dc.contributor.author | Jin, Hosub | - |
| dc.contributor.author | Freeman, AJ | - |
| dc.contributor.author | Wessels, BW | - |
| dc.date.accessioned | 2023-12-22T01:42:54Z | - |
| dc.date.available | 2023-12-22T01:42:54Z | - |
| dc.date.created | 2015-07-29 | - |
| dc.date.issued | 2015-01 | - |
| dc.description.abstract | The ternary compound Cs2Hg6S7 has shown considerable promise as a wide gap semiconductor for hard radiation detection at room temperature. We report on the measurement of defect levels in Cs2Hg6S7 using photo-induced current transient spectroscopy. We observe a series of defect levels with mean activation energies of 0.053, 0.052, 0.34, 0.35, and 0.46 eV. The defects are attributed to Cs vacancies and Cs and Hg antisite defects. Defect capture cross-sections are in the range 10(-20)-10(-15) cm(2). | - |
| dc.identifier.bibliographicCitation | JOURNAL OF ELECTRONIC MATERIALS, v.44, pp.222 - 226 | - |
| dc.identifier.doi | 10.1007/s11664-014-3372-2 | - |
| dc.identifier.issn | 0361-5235 | - |
| dc.identifier.scopusid | 2-s2.0-84925487136 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/16805 | - |
| dc.identifier.url | http://link.springer.com/article/10.1007%2Fs11664-014-3372-2 | - |
| dc.identifier.wosid | 000346703800029 | - |
| dc.language | 영어 | - |
| dc.publisher | SPRINGER | - |
| dc.title | Photo-Induced Current Transient Spectroscopy of Semi-insulating Single Crystal Cs2Hg6S7 | - |
| dc.type | Article | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordAuthor | Cs-based semiconductor | - |
| dc.subject.keywordAuthor | wide gap semiconductor | - |
| dc.subject.keywordAuthor | photoconductivity | - |
| dc.subject.keywordAuthor | defects | - |
| dc.subject.keywordAuthor | gamma-ray | - |
| dc.subject.keywordPlus | RESISTIVITY BULK MATERIAL | - |
| dc.subject.keywordPlus | DEEP LEVELS | - |
| dc.subject.keywordPlus | DETECTORS | - |
| dc.subject.keywordPlus | CDTE | - |
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