Thermal Oxidation of WSe2 Nanosheets Adhered on SiO2/Si Substrates
Cited 0 times inCited 0 times in
- Thermal Oxidation of WSe2 Nanosheets Adhered on SiO2/Si Substrates
- Liu, Yingnan; Tan, Cheng; Chou, Harry; Nayak, Avinash; Wu, Di; Ghosh, Rudresh; Chang, Hsiao-Yu; Hao, Yufeng; Wang, Xiaohan; Kim, Joon-Seok; Piner, Richard; Ruoff, Rodney S.; Akinwande, Deji; Lai, Keji
- Issue Date
- AMER CHEMICAL SOC
- NANO LETTERS, v.15, no.8, pp.4979 - 4984
- Because of the drastically different intralayer versus interlayer bonding strengths, the mechanical, thermal, and electrical properties of two-dimensional (2D) materials are highly anisotropic between the in-plane and out-of-plane directions. The structural anisotropy may also play a role in chemical reactions, such as oxidation, reduction, and etching. Here, the composition, structure, and electrical properties of mechanically exfoliated WSe2 nanosheets on SiO2/Si substrates were studied as a function of the extent of thermal oxidation. A major component of the oxidation, as indicated from optical and Raman data, starts from the nanosheet edges and propagates laterally toward the center. Partial oxidation also occurs in certain areas at the surface of the flakes, which are shown to be highly conductive by microwave impedance microscopy. Using secondary ion mass spectroscopy, we also observed extensive oxidation at the WSe2-SiO2 interface. The combination of multiple microcopy methods can thus provide vital information on the spatial evolution of chemical reactions on 2D materials and the nanoscale electrical properties of the reaction products
- Appears in Collections:
- SNS_Journal Papers
- Files in This Item:
- There are no files associated with this item.
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.