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신태주

Shin, Tae Joo
Synchrotron Radiation Research Lab.
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dc.citation.endPage 402 -
dc.citation.startPage 397 -
dc.citation.title MOLECULAR CRYSTALS AND LIQUID CRYSTALS -
dc.citation.volume 371 -
dc.contributor.author Oh, W -
dc.contributor.author Shin, Tae Joo -
dc.contributor.author Ree, M -
dc.contributor.author Jin, MY -
dc.contributor.author Char, K -
dc.date.accessioned 2023-12-22T11:45:01Z -
dc.date.available 2023-12-22T11:45:01Z -
dc.date.created 2015-09-04 -
dc.date.issued 2001-04 -
dc.description.abstract Residual stress of methylsilsequioxane film, which was spin-coated on silicon substrate and followed by soft-baking, was measured in-situ during curing and subsequent cooling with varying processing conditions. The thickness and refractive index of the cured films were measured using ellipsometry. Their structure was also examined by Xray diffraction -
dc.identifier.bibliographicCitation MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.371, pp.397 - 402 -
dc.identifier.doi 10.1080/10587250108024768 -
dc.identifier.issn 1542-1406 -
dc.identifier.scopusid 2-s2.0-0242558134 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/16640 -
dc.identifier.url http://www.tandfonline.com/doi/abs/10.1080/10587250108024768#.VekDOyXtlBc -
dc.identifier.wosid 000172816400097 -
dc.language 영어 -
dc.publisher TAYLOR & FRANCIS LTD -
dc.title Residual stress behavior in methylsilsesquioxane-based dielectric thin films -
dc.type Article -

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