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신태주

Shin, Tae Joo
Synchrotron Radiation Research Lab.
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dc.citation.endPage 11543 -
dc.citation.number 33 -
dc.citation.startPage 11542 -
dc.citation.title JOURNAL OF THE AMERICAN CHEMICAL SOCIETY -
dc.citation.volume 127 -
dc.contributor.author Yang, Hoichang -
dc.contributor.author Shin, Tae Joo -
dc.contributor.author Ling, Mang-Mang -
dc.contributor.author Cho, Kilwon -
dc.contributor.author Ryu, Chang Y. -
dc.contributor.author Bao, Zhenan -
dc.date.accessioned 2023-12-22T10:14:27Z -
dc.date.available 2023-12-22T10:14:27Z -
dc.date.created 2015-09-04 -
dc.date.issued 2005-08 -
dc.description.abstract Among all organic semiconductors, pentacene has been shown to have the highest thin film mobility reported to date. The crystalline structure of the first few pentacene layers deposited on a dielectric substrate is strongly dependent on the dielectric surface properties, directly affecting the charge mobility of pentacene thin film OTFTs. Herein, we report that there is a direct correlation between the crystalline structure of the initial submonolayer of a pentacene film and the mobility of the corresponding 60-nm-thick films showing terrace-like structure, as confirmed by 2D grazing-incidence X-ray diffraction and atomic force microscopy. Specifically, multilayered pentacene films, grown from single crystal-like faceted islands on HMDS-treated surface, have shown much higher charge mobility (μ = 3.4 ± 0.5 cm2/Vs) than those with polycrystalline dendritic islands (μ = 0.5 ± 0.15 cm2/Vs) on OTS-treated ones. -
dc.identifier.bibliographicCitation JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.127, no.33, pp.11542 - 11543 -
dc.identifier.doi 10.1021/ja052478e -
dc.identifier.issn 0002-7863 -
dc.identifier.scopusid 2-s2.0-23944443280 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/16630 -
dc.identifier.url http://pubs.acs.org/doi/abs/10.1021/ja052478e -
dc.identifier.wosid 000231454100005 -
dc.language 영어 -
dc.publisher AMER CHEMICAL SOC -
dc.title Conducting AFM and 2D GIXD studies on pentacene thin films -
dc.type Article -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus FIELD-EFFECT TRANSISTORS -
dc.subject.keywordPlus SILICON DIOXIDE -
dc.subject.keywordPlus SURFACE -
dc.subject.keywordPlus PERFORMANCE -
dc.subject.keywordPlus DEPOSITION -
dc.subject.keywordPlus MORPHOLOGY -
dc.subject.keywordPlus SUBSTRATE -
dc.subject.keywordPlus GROWTH -

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