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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 11543 | - |
dc.citation.number | 33 | - |
dc.citation.startPage | 11542 | - |
dc.citation.title | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | - |
dc.citation.volume | 127 | - |
dc.contributor.author | Yang, Hoichang | - |
dc.contributor.author | Shin, Tae Joo | - |
dc.contributor.author | Ling, Mang-Mang | - |
dc.contributor.author | Cho, Kilwon | - |
dc.contributor.author | Ryu, Chang Y. | - |
dc.contributor.author | Bao, Zhenan | - |
dc.date.accessioned | 2023-12-22T10:14:27Z | - |
dc.date.available | 2023-12-22T10:14:27Z | - |
dc.date.created | 2015-09-04 | - |
dc.date.issued | 2005-08 | - |
dc.description.abstract | Among all organic semiconductors, pentacene has been shown to have the highest thin film mobility reported to date. The crystalline structure of the first few pentacene layers deposited on a dielectric substrate is strongly dependent on the dielectric surface properties, directly affecting the charge mobility of pentacene thin film OTFTs. Herein, we report that there is a direct correlation between the crystalline structure of the initial submonolayer of a pentacene film and the mobility of the corresponding 60-nm-thick films showing terrace-like structure, as confirmed by 2D grazing-incidence X-ray diffraction and atomic force microscopy. Specifically, multilayered pentacene films, grown from single crystal-like faceted islands on HMDS-treated surface, have shown much higher charge mobility (μ = 3.4 ± 0.5 cm2/Vs) than those with polycrystalline dendritic islands (μ = 0.5 ± 0.15 cm2/Vs) on OTS-treated ones. | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.127, no.33, pp.11542 - 11543 | - |
dc.identifier.doi | 10.1021/ja052478e | - |
dc.identifier.issn | 0002-7863 | - |
dc.identifier.scopusid | 2-s2.0-23944443280 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/16630 | - |
dc.identifier.url | http://pubs.acs.org/doi/abs/10.1021/ja052478e | - |
dc.identifier.wosid | 000231454100005 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Conducting AFM and 2D GIXD studies on pentacene thin films | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | SILICON DIOXIDE | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | MORPHOLOGY | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | GROWTH | - |
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