BROWSE

Related Researcher

Author's Photo

Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

ITEM VIEW & DOWNLOAD

Gate induced drain leakage reduction with analysis of gate fringing field effect on high-kappa/metal gate CMOS technology

Cited 0 times inthomson ciCited 0 times inthomson ci
Title
Gate induced drain leakage reduction with analysis of gate fringing field effect on high-kappa/metal gate CMOS technology
Author
Jang, EsanShin, SunhaeJung, Jae WonKim, Kyung Rok
Issue Date
2015-06
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.54, no.6, pp.06FG10
Abstract
We suggest the optimum permittivity for a high-kappa/metal gate (HKMG) CMOS structure based on the trade-off characteristics between the fringing field induced barrier lowering (FIBL) and gate induced drain leakage (GIDL). By adopting the high-kappa gate dielectric, the GIDL from the band-to-band tunneling at the interface of gate and lightly doped drain (LDD) is suppressed with wide tunneling width owing to the enhanced fringing field, while the FIBL effects is degenerated as the previous reports. These two effects from the gate fringing field are studied extensively to manage the leakage current of HKMG for low power applications. (C) 2015 The Japan Society of Applied Physic
URI
https://scholarworks.unist.ac.kr/handle/201301/16546
URL
http://iopscience.iop.org/1347-4065/54/6S1/06FG10/
DOI
10.7567/JJAP.54.06FG10
ISSN
0021-4922
Appears in Collections:
EE_Journal Papers
Files in This Item:
There are no files associated with this item.

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qrcode

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU