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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 2403 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 2396 | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 62 | - |
dc.contributor.author | Shin, Sunhae | - |
dc.contributor.author | Jang, Esan | - |
dc.contributor.author | Jeong, Jae Won | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.contributor.author | Kim, Kyung Rok | - |
dc.date.accessioned | 2023-12-22T01:06:32Z | - |
dc.date.available | 2023-12-22T01:06:32Z | - |
dc.date.created | 2015-09-01 | - |
dc.date.issued | 2015-08 | - |
dc.description.abstract | We propose a novel standard ternary inverter (STI) based on nanoscale CMOS technology for a compact design of multivalued logic. Using the gate bias independent OFF-state mechanisms of junction band-to-band tunneling (BTBT), tristate STI operation has been demonstrated in the conventional binary CMOS inverter by TCAD device and mixed-mode circuit simulation with 32-nm high-kappa/metal-gate technology. Through analytical device modeling on BTBT and subthreshold current, static noise margin (SNM), off-leakage variation (OLV), and operation voltage (V-DD) scaling limits of STI have been investigated. The typical SNM is 200 mV and the variability of the intermediate level (Delta V-OM similar to 50 mV) from OLV can be allowable into the worst SNM (>100 mV) of STI operation at V-DD = 1 V. Exponentially reduced BTBT off-leakage around minimum V-DD similar to 0.1 V is promising for ultimate low-power application of our STI | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.62, no.8, pp.2396 - 2403 | - |
dc.identifier.doi | 10.1109/TED.2015.2445823 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.scopusid | 2-s2.0-85027918220 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/16430 | - |
dc.identifier.url | http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7150399 | - |
dc.identifier.wosid | 000358507600005 | - |
dc.language | 영어 | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Compact Design of Low Power Standard Ternary Inverter Based on OFF-State Current Mechanism Using Nano-CMOS Technology | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Physics, Applied | - |
dc.relation.journalResearchArea | Engineering; Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Band-to-band tunneling (BTBT) | - |
dc.subject.keywordAuthor | CMOS technology | - |
dc.subject.keywordAuthor | low-power | - |
dc.subject.keywordAuthor | multivalued logic | - |
dc.subject.keywordAuthor | noise margin | - |
dc.subject.keywordAuthor | off-leakage variation (OLV) | - |
dc.subject.keywordAuthor | standard ternary inverter (STI) | - |
dc.subject.keywordPlus | MULTIPLE-VALUED LOGIC | - |
dc.subject.keywordPlus | NOISE MARGIN CRITERIA | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | MEMORY | - |
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