dc.citation.startPage |
041202 |
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dc.citation.title |
PHYSICAL REVIEW B |
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dc.citation.volume |
83 |
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dc.contributor.author |
Jin, Hosub |
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dc.contributor.author |
Song, Jung-Hwan |
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dc.contributor.author |
Freeman, Arthur J |
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dc.contributor.author |
Kanatzidis, Mercouri G |
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dc.date.accessioned |
2023-12-22T06:37:01Z |
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dc.date.available |
2023-12-22T06:37:01Z |
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dc.date.created |
2015-07-29 |
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dc.date.issued |
2011-01 |
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dc.description.abstract |
We theoretically predict that the series of Pb-based layered chalcogenides, PbnBi2Sen+3and PbnSb2Ten+3, are possible new candidates for topological insulators, and the topological phases are changed from a topological insulator to a band insulator with increasing n. Among the new topological insulators, we found a large bulk band gap of 0.40 eV in PbBi2Se4, and that of Pb2Sb2Te5 is located near the phase boundary between a trivial and a nontrivial topological insulator, which raises the possibility of tuning the topological phase by changing the external parameters. |
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dc.identifier.bibliographicCitation |
PHYSICAL REVIEW B, v.83, pp.041202 |
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dc.identifier.doi |
10.1103/PhysRevB.83.041202 |
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dc.identifier.issn |
2469-9950 |
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dc.identifier.scopusid |
2-s2.0-79551651243 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/13410 |
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dc.identifier.url |
http://journals.aps.org/prb/abstract/10.1103/PhysRevB.83.041202 |
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dc.identifier.wosid |
000286897100001 |
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dc.language |
영어 |
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dc.publisher |
AMER PHYSICAL SOC |
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dc.title |
Candidates for topological insulators: Pb-based chalcogenide series |
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dc.type |
Article |
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dc.description.isOpenAccess |
FALSE |
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dc.description.journalRegisteredClass |
scie |
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dc.description.journalRegisteredClass |
scopus |
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