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Jin, Hosub
Quantum Materials Design Lab
Research Interests
  • Spin-orbit coupling, electron-correlation, topological quantum phases

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Dirac cone engineering in Bi2Se3 thin films

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dc.contributor.author Jin, Hosub ko
dc.contributor.author Song, Jung-Hwan ko
dc.contributor.author Freeman, Arthur J ko
dc.date.available 2015-08-11T00:07:59Z -
dc.date.created 2015-07-29 ko
dc.date.issued 2011-03 ko
dc.identifier.citation PHYSICAL REVIEW B, v.83, pp.125319 ko
dc.identifier.issn 2469-9950 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/13409 -
dc.description.abstract In spite of the clear surface-state Dirac cone features in bismuth-based three-dimensional strong topological insulator materials, the Dirac point known as the Kramers point and the topological transport regime are located near the bulk valence band maximum. As a result of a nonisolated Dirac point, the topological transport regime cannot be acquired and there possibly exist scattering channels between surface and bulk states as well. We show that an ideal and isolated Dirac cone is realized in a slab geometry made of Bi2Se3 with appropriate substitutions of surface Se atoms. As an extension of Dirac cone engineering, we also investigate Bi2Se3 ultrathin films with asymmetric or magnetic substitutions of the surface atoms, which can be linked to spintronics applications. ko
dc.description.statementofresponsibility open -
dc.language 영어 ko
dc.publisher AMER PHYSICAL SOC ko
dc.title Dirac cone engineering in Bi2Se3 thin films ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-79961040990 ko
dc.identifier.wosid 000288896500003 ko
dc.type.rims ART ko
dc.description.wostc 19 *
dc.description.scopustc 19 *
dc.date.tcdate 2015-12-28 *
dc.date.scptcdate 2015-11-04 *
dc.identifier.doi 10.1103/PhysRevB.83.125319 ko
dc.identifier.url http://journals.aps.org/prb/abstract/10.1103/PhysRevB.83.125319 ko
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