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Jin, Hosub
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Multiple Dirac fermions from a topological insulator and graphene superlattice

Author(s)
Jin, HosubIm, JinoSong, Jung-HwanFreeman, Arthur J
Issued Date
2012-01
DOI
10.1103/PhysRevB.85.045307
URI
https://scholarworks.unist.ac.kr/handle/201301/13407
Fulltext
http://journals.aps.org/prb/abstract/10.1103/PhysRevB.85.045307
Citation
PHYSICAL REVIEW B, v.85, pp.045307
Abstract
Graphene and three-dimensional topological insulators are well-known Dirac materials whose bulk and surface states are governed by Dirac equations. They not only show good transport properties but also carry various quanta related to the geometrical phase such as charge, spin, and valley Hall conductances. Therefore, it is a great challenge to combine the two Dirac materials together, realizing multiple Dirac fermions. By using first-principles density-functional-theory calculations, we demonstrate such a system built from topological insulator-band insulator-graphene superlattice structures. Hexagonal boron nitride is proposed as an ideal band-insulating material in gluing graphene and topological insulators, providing a good substrate for graphene and a sharp interface with a topological insulator. The power factors for p-type doping are largely enhanced due to the charge-conducting channels through multiple Dirac cones. The systems characterized by the coexistence of the topologically protected interfacial and graphene Dirac cones can pave the way for developing integrated devices for electronics, spintronics and valleytronics applications.
Publisher
American Physical Society
ISSN
2469-9950
Keyword
HEXAGONAL BORON-NITRIDEPLANE-WAVE METHODMICROSCOPYCOLLOQUIUM

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