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Jin, Hosub
Quantum Materials Design Lab
Research Interests
  • Spin-orbit coupling, electron-correlation, topological quantum phases

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Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

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dc.contributor.author Zhou, Nanjia ko
dc.contributor.author Kim, Myung-Gil ko
dc.contributor.author Loser, Stephen ko
dc.contributor.author Smith, Jeremy ko
dc.contributor.author Yoshida, Hiroyuki ko
dc.contributor.author Guo, Xugang ko
dc.contributor.author Song, Charles ko
dc.contributor.author Jin, Hosub ko
dc.contributor.author Chen, Zhihua ko
dc.contributor.author Yoon, Seok Min ko
dc.contributor.author Freeman, Arthur J. ko
dc.contributor.author Chang, Robert P.H. ko
dc.contributor.author Facchetti, Antonio ko
dc.contributor.author Marks, Tobin J. ko
dc.date.available 2015-08-10T07:47:12Z -
dc.date.created 2015-07-29 ko
dc.date.issued 2015-06 -
dc.identifier.citation PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, v.112, no.26, pp.7897 - 7902 ko
dc.identifier.issn 0027-8424 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/13386 -
dc.identifier.uri http://www.pnas.org/content/112/26/7897 ko
dc.description.abstract In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor-inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance. ko
dc.description.statementofresponsibility close -
dc.language ENG ko
dc.publisher NATL ACAD SCIENCES ko
dc.subject interface ko
dc.subject amorphous oxide ko
dc.subject photovoltaic ko
dc.subject interfacial layers ko
dc.title Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-84937878551 ko
dc.identifier.wosid 000357079400027 ko
dc.type.rims ART ko
dc.description.wostc 3 *
dc.description.scopustc 2 *
dc.date.tcdate 2015-12-28 *
dc.date.scptcdate 2015-11-04 *
dc.identifier.doi 10.1073/pnas.1508578112 ko
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