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Lee, Geunsik
Computational Research on Electronic Structure and Transport in Condensed Materials
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dc.citation.endPage 623 -
dc.citation.number 10-11 -
dc.citation.startPage 619 -
dc.citation.title SOLID STATE COMMUNICATIONS -
dc.citation.volume 119 -
dc.contributor.author Kulkova, S.E. -
dc.contributor.author Valujsky, D.V. -
dc.contributor.author Kim, J.S. -
dc.contributor.author Lee, Geunsik -
dc.contributor.author Koo, Y.M. -
dc.date.accessioned 2023-12-22T11:43:00Z -
dc.date.available 2023-12-22T11:43:00Z -
dc.date.created 2015-08-03 -
dc.date.issued 2001-08 -
dc.description.abstract The electronic and structural properties for TiMe (Me = Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt) alloys are studied using the full-potential linearized augmented plane wave (FLAPW) method. The alteration of electronic structure with disorder and alloying with a third element is analyzed. The calculated emission, absorption X-ray and electron energy-loss spectra are found to be in good agreement with experiments. (C) 2001 Elsevier Science Ltd. All rights reserved -
dc.identifier.bibliographicCitation SOLID STATE COMMUNICATIONS, v.119, no.10-11, pp.619 - 623 -
dc.identifier.doi 10.1016/S0038-1098(01)00290-3 -
dc.identifier.issn 0038-1098 -
dc.identifier.scopusid 2-s2.0-0035968436 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/13297 -
dc.identifier.url http://www.sciencedirect.com/science/article/pii/S0038109801002903 -
dc.identifier.wosid 000170638300012 -
dc.language 영어 -
dc.publisher PERGAMON-ELSEVIER SCIENCE LTD -
dc.title.alternative Electronic structure of binary and ternary Ti-based shape-memory alloys -
dc.title Electronic structure of binary and ternary Ti-based shape-memory alloys -
dc.type Article -
dc.description.journalRegisteredClass scopus -

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