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Lee, Geunsik
Computational Research on Electronic Structure and Transport in Condensed Materials
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dc.citation.number 11 -
dc.citation.startPage 115460 -
dc.citation.title PHYSICAL REVIEW B -
dc.citation.volume 84 -
dc.contributor.author Zhang, Hengji -
dc.contributor.author Lee, Geunsik -
dc.contributor.author Cho, Kyeongjae -
dc.date.accessioned 2023-12-22T05:46:24Z -
dc.date.available 2023-12-22T05:46:24Z -
dc.date.created 2015-07-29 -
dc.date.issued 2011-09 -
dc.description.abstract We have performed molecular dynamics simulations to investigate phonon transport in graphene at 300 K with the Green-Kubo method. We show that the thermal conductivity (TC) of pristine graphene is 2903 +/- 93 W/mK, and the out-of-plane phonon mode contribution is 1202 +/- 32 W/mK. We further investigate thermal transport in graphene with different vacancy defect concentrations, and the TC shows that it is possible to achieve a maximum of a thousandfold reduction with a high defect density. -
dc.identifier.bibliographicCitation PHYSICAL REVIEW B, v.84, no.11, pp.115460 -
dc.identifier.doi 10.1103/PhysRevB.84.115460 -
dc.identifier.issn 2469-9950 -
dc.identifier.scopusid 2-s2.0-80053607067 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/13135 -
dc.identifier.url http://journals.aps.org/prb/abstract/10.1103/PhysRevB.84.115460 -
dc.identifier.wosid 000295263600014 -
dc.language 영어 -
dc.publisher AMER PHYSICAL SOC -
dc.title.alternative Thermal transport in graphene and effects of vacancy defects -
dc.title Thermal transport in graphene and effects of vacancy defects -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -

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