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DC Field | Value | Language |
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dc.citation.endPage | 2581 | - |
dc.citation.number | 20 | - |
dc.citation.startPage | 2577 | - |
dc.citation.title | JOURNAL OF PHYSICAL CHEMISTRY LETTERS | - |
dc.citation.volume | 2 | - |
dc.contributor.author | Yang, Jae Won | - |
dc.contributor.author | Lee, Geunsik | - |
dc.contributor.author | Kim, Jai Sam | - |
dc.contributor.author | Kim, Kwang S. | - |
dc.date.accessioned | 2023-12-22T05:46:22Z | - |
dc.date.available | 2023-12-22T05:46:22Z | - |
dc.date.created | 2015-07-29 | - |
dc.date.issued | 2011-09 | - |
dc.description.abstract | The band gap opening of graphene is the most desired property in the device industry because it is vital to the application of graphene as a logical device of semiconductors. Here, we show how to make a reasonably wide band gap in graphene. This is accomplished with bilayer graphene (BLG) dual-doped with FeCl3-acceptor and K-donor. To elucidate this phenomenon, we employed the first-principles method taking into account van der Waals interaction. For the FeCl3 adsorbed BLG, the optimal distance between the adjacent graphene and FeCl3 layers is 4.6-4.8 angstrom, consistent with experiments. Due to the high electronegativity of FeCl3, these graphene layers are hole-doped. The dual-doped BLG gives a band gap of 0.27 eV due to broken symmetry, with a Dirac point shift by -0.09 eV. This increased band gap and proper Dirac point shift could make the dual-doped BLG useful for applications toward future field effect transistor devices. | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICAL CHEMISTRY LETTERS, v.2, no.20, pp.2577 - 2581 | - |
dc.identifier.doi | 10.1021/jz201098u | - |
dc.identifier.issn | 1948-7185 | - |
dc.identifier.scopusid | 2-s2.0-80054929379 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/13134 | - |
dc.identifier.url | http://pubs.acs.org/doi/abs/10.1021/jz201098u | - |
dc.identifier.wosid | 000296128400013 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title.alternative | Gap Opening of Graphene by Dual FeCl3-Acceptor and K-Donor Doping | - |
dc.title | Gap Opening of Graphene by Dual FeCl3-Acceptor and K-Donor Doping | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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