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Lee, Geunsik
Electronic Structure and Transport in Condensed Materials
Research Interests
  • open quantum system, non-equilibrium electron transport
  • electron correlation, dynamical mean field theory
  • 2D materials, metal complexes

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Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone

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dc.contributor.author Jandhyala, Srikar ko
dc.contributor.author Mordi, Greg ko
dc.contributor.author Lee, Bongki ko
dc.contributor.author Lee, Geunsik ko
dc.contributor.author Floresca, Carlo ko
dc.contributor.author Cha, Pil-Ryung ko
dc.contributor.author Ahn, Jinho ko
dc.contributor.author Wallace, Robert M. ko
dc.contributor.author Chabal, Yves J. ko
dc.contributor.author Kim, Moon J. ko
dc.contributor.author Colombo, Luigi ko
dc.contributor.author Cho, Kyeongjae ko
dc.contributor.author Kim, Jiyoung ko
dc.date.available 2015-07-30T06:30:36Z -
dc.date.created 2015-07-29 ko
dc.date.issued 2012-02 ko
dc.identifier.citation ACS NANO, v.6, no.3, pp.2722 - 2730 ko
dc.identifier.issn 1936-0851 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/13131 -
dc.description.abstract Integration of graphene field-effect transistors (GFETs) requires the ability to grow or deposit high-quality, ultrathin dielectric insulators on graphene to modulate the channel potential. Here, we study a novel and facile approach based on atomic layer deposition through ozone functionalization to deposit high-K dielectrics (such as Al2O3) without breaking vacuum. The underlying mechanisms of functionalization have been studied theoretically using ab initio calculations and experimentally using in situ monitoring of transport properties. It is found that ozone molecules are physisorbed on the surface of graphene, which act as nucleation sites for dielectric deposition. The physisorbed ozone molecules eventually react with the metal precursor, trimethylaluminum to form Al2O3. Additionally, we successfully demonstrate the performance of dual-gated GFETs with Al2O3 of sub-5 nm physical thickness as a gate dielectric. Back-gated GFETs with mobilities of similar to 19 000 cm(2)/(V.s) are also achieved after Al2O3 deposition. These results indicate that ozone functionalization is a promising pathway to achieve scaled gate dielectrics on graphene without leaving a residual nucleation layer. ko
dc.description.statementofresponsibility close -
dc.language 영어 ko
dc.publisher AMER CHEMICAL SOC ko
dc.title Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone ko
dc.title.alternative Atomic Layer Deposition of Dielectrics on Graphene Using Reversibly Physisorbed Ozone ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-84859136830 ko
dc.identifier.wosid 000301945900090 ko
dc.type.rims ART ko
dc.description.wostc 53 *
dc.description.scopustc 50 *
dc.date.tcdate 2015-12-28 *
dc.date.scptcdate 2015-11-04 *
dc.identifier.doi 10.1021/nn300167t ko
dc.identifier.url http://pubs.acs.org/doi/abs/10.1021/nn300167t ko
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