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Oh, Yoon Seok
Laboratory for Strong Correlation in Quantum Materials
Research Interests
  • Multiferroic
  • Ferroelectric
  • Quantum Magnetism

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A study on the validity of the skew scattering model for the anomalous hall effect in low-temperature molecular-beam epitaxy gallium manganese arsenide

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dc.contributor.author Kim, YS ko
dc.contributor.author Jeong, IT ko
dc.contributor.author Woo, JC ko
dc.contributor.author Khim, ZG ko
dc.contributor.author Lee, JS ko
dc.contributor.author Choi, HK ko
dc.contributor.author Oh, Yoon Seok ko
dc.contributor.author Kim, KH ko
dc.contributor.author Park, YD ko
dc.contributor.author Chun, SH ko
dc.date.available 2015-07-27T05:04:26Z -
dc.date.created 2015-07-08 ko
dc.date.issued 2005-08 -
dc.identifier.citation JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.47, no.2, pp.306 - 312 ko
dc.identifier.issn 0374-4884 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/12654 -
dc.identifier.uri http://www.kps.or.kr/jkps/abstract_view.asp?articleuid=2141DF49-D702-4D70-B6C6-5ECC2A084C5F&globalmenu=3&localmenu=10 ko
dc.description.abstract We report on an investigation of the applicability of the skew scattering model for the anomalous Hall Effect in (Ga,Mn)As prepared using low-temperature molecular beam epitaxy. Specifically, we study the relationship between the Hall resistivity ($\rho_{xy}$) and the longitudinal resistivity ($\rho_{xx}$) for differing Mn concentrations incorporated into the III$_{Ga}$ site. The growth conditions for single-phase (Ga,Mn)As were carefully determined by using {\it in-situ} reflection high-energy electron diffraction, {\it ex-situ} high-resolution X-ray diffraction, superconducting quantum interference device magnetometry, and magneto-transport measurements. After the growth of (Ga,Mn)As with values of T$_C$ ranging from 60 to 100 K, the samples were annealed in an inert atmosphere, with the resulting values of T$_C$ ranging from 80 to 130 K as measured indirectly from transport measurements and from Hall measurements. From the Hall measurements, we found that the anomalous Hall coefficient to scaled linearly with the resistivity for various ranges of Mn contents in which we could rule out the co-existence of secondary precipitates. ko
dc.description.statementofresponsibility close -
dc.language ENG ko
dc.publisher KOREAN PHYSICAL SOC ko
dc.subject Magnetic semiconductor, Anomalous Hall Effect, Spintronics ko
dc.title A study on the validity of the skew scattering model for the anomalous hall effect in low-temperature molecular-beam epitaxy gallium manganese arsenide ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-24644466896 ko
dc.identifier.wosid 000231226400023 ko
dc.type.rims ART ko
dc.description.wostc 11 *
dc.description.scopustc 0 *
dc.date.tcdate 2015-12-28 *
dc.identifier.doi 10.3938/jkps.47.306 ko
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