A study on the validity of the skew scattering model for the anomalous hall effect in low-temperature molecular-beam epitaxy gallium manganese arsenide

Abstract

We report on an investigation of the applicability of the skew scattering model for the anomalous Hall Effect in (Ga,Mn)As prepared using low-temperature molecular beam epitaxy. Specifically, we study the relationship between the Hall resistivity ($\rho_{xy}$) and the longitudinal resistivity ($\rho_{xx}$) for differing Mn concentrations incorporated into the III$_{Ga}$ site. The growth conditions for single-phase (Ga,Mn)As were carefully determined by using {\it in-situ} reflection high-energy electron diffraction, {\it ex-situ} high-resolution X-ray diffraction, superconducting quantum interference device magnetometry, and magneto-transport measurements. After the growth of (Ga,Mn)As with values of T$_C$ ranging from 60 to 100 K, the samples were annealed in an inert atmosphere, with the resulting values of T$_C$ ranging from 80 to 130 K as measured indirectly from transport measurements and from Hall measurements. From the Hall measurements, we found that the anomalous Hall coefficient to scaled linearly with the resistivity for various ranges of Mn contents in which we could rule out the co-existence of secondary precipitates.