Non-monotonic dependence of the anomalous Hall coefficient scaling parameter in annealed Ga1− xMnxAs epifilms

Abstract

When plotting the anomalous Hall coefficient (Rs) and longitudinal resistivty (ρxx) for a series of annealed Ga1-xMnxAs epilayers (x≈0.055), we find the value of the scaling parameter n, from RS=cρxx n, to range from one, as-grown, to two at an optimal annealing temperature to values greater than three for higher annealing temperatures, similar behavior to certain inhomogeneous systems. This scaling relationship can be a new method to detect secondary phases in ferromagnetic semiconductor systems. © 2006 Elsevier B.V. All rights reserved.