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- Kim, Kyung Rok
- Nano-Electronic Emerging Devices Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 1510 | - |
| dc.citation.number | 5 | - |
| dc.citation.startPage | 1504 | - |
| dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
| dc.citation.volume | 62 | - |
| dc.contributor.author | Kyung Min | - |
| dc.contributor.author | Jaeman Jang | - |
| dc.contributor.author | Choi, Sung-Jin | - |
| dc.contributor.author | Kim, Dong Myong | - |
| dc.contributor.author | Kim, Kyung Rok | - |
| dc.contributor.author | Kim, Dae Hwan | - |
| dc.date.accessioned | 2023-12-22T01:15:03Z | - |
| dc.date.available | 2023-12-22T01:15:03Z | - |
| dc.date.created | 2015-07-13 | - |
| dc.date.issued | 2015-05 | - |
| dc.description.abstract | We found that field-effect mobility, which had been widely used in the evaluation of the mobility of an amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) failed to describe the effect of mobility on propagation delay (tPD) in an a-IGZO TFT-based circuit, and also proposed an extraction technique for the tPD-correlated mobility (μtPD) considering both the subgap density-of-states and the voltage-dependent charge density. It is verified that the proposed μtPD is the best correlated with the measured tPD in IGZO TFT-based inverters other than various mobilities in the literature. Our results have revealed that it is possible to predict tPD only with the measured current-voltage characteristic of the a-IGZO TFT without measuring tPD in IGZO-based circuits. | - |
| dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.62, no.5, pp.1504 - 1510 | - |
| dc.identifier.doi | 10.1109/TED.2015.2413941 | - |
| dc.identifier.issn | 0018-9383 | - |
| dc.identifier.scopusid | 2-s2.0-85027947506 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/12317 | - |
| dc.identifier.url | http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7067392 | - |
| dc.identifier.wosid | 000353564600021 | - |
| dc.language | 영어 | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | Extraction of Propagation Delay-Correlated Mobility and Its Verification for Amorphous InGaZnO Thin-Film Transistor-Based Inverters | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Physics, Applied | - |
| dc.relation.journalResearchArea | Engineering; Physics | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordAuthor | Amorphous indium-gallium-zinc oxide (a-IGZO) | - |
| dc.subject.keywordAuthor | mobility | - |
| dc.subject.keywordAuthor | propagation delay | - |
| dc.subject.keywordAuthor | subgap density-of-states (DOSs) | - |
| dc.subject.keywordAuthor | thin-film transistors (TFTs) | - |
| dc.subject.keywordPlus | SILICON | - |
| dc.subject.keywordPlus | DISPLAY | - |
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