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DC Field | Value | Language |
---|---|---|
dc.citation.number | 6 | - |
dc.citation.startPage | 06FG07 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 54 | - |
dc.contributor.author | Shin, Sunhae | - |
dc.contributor.author | Kim, Kyung Rok | - |
dc.date.accessioned | 2023-12-22T01:11:22Z | - |
dc.date.available | 2023-12-22T01:11:22Z | - |
dc.date.created | 2015-07-13 | - |
dc.date.issued | 2015-06 | - |
dc.description.abstract | In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) over 106 by combining tunnel diode with a conventional MOSFET, which suppresses the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) in tunnel junction provides the first peak, and the second peak and valley are generated from the suppression of diffusion current in tunnel diode by the off-state MOSFET. The multiple NDR curves can be controlled by doping concentration of tunnel junction and the threshold voltage of MOSFET. By using complementary multiple NDR devices, five-state memory is demonstrated only with six transistors. | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.54, no.6, pp.06FG07 | - |
dc.identifier.doi | 10.7567/JJAP.54.06FG07 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.scopusid | 2-s2.0-84930717769 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/12315 | - |
dc.identifier.url | http://iopscience.iop.org/1347-4065/54/6S1/06FG07/ | - |
dc.identifier.wosid | 000358264900028 | - |
dc.language | 영어 | - |
dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
dc.title | Multiple negative differential resistance devices with ultra-high peak-to-valley current ratio for practical multi-valued logic and memory applications | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.subject.keywordPlus | INTERBAND TUNNELING DIODES | - |
dc.subject.keywordPlus | VALUED LOGIC | - |
dc.subject.keywordPlus | TRANSISTOR | - |
dc.subject.keywordPlus | FIELD | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | MODEL | - |
dc.subject.keywordPlus | NDR | - |
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