Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.startPage | 10808 | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 5 | - |
dc.contributor.author | Kang, San | - |
dc.contributor.author | Mandal, Arjun | - |
dc.contributor.author | Chu, Jae Hwan | - |
dc.contributor.author | Park, Ji-Hyeon | - |
dc.contributor.author | Kwon, Soon-Yong | - |
dc.contributor.author | Lee, Cheul-Ro | - |
dc.date.accessioned | 2023-12-22T01:11:46Z | - |
dc.date.available | 2023-12-22T01:11:46Z | - |
dc.date.created | 2015-06-29 | - |
dc.date.issued | 2015-06 | - |
dc.description.abstract | The superior photoconductive behavior of a simple, cost-effective n-GaN nanorod (NR)-graphene hybrid device structure is demonstrated for the first time. The proposed hybrid structure was synthesized on a Si (111) substrate using the high-quality graphene transfer method and the relatively low-temperature metal-organic chemical vapor deposition (MOCVD) process with a high V/III ratio to protect the graphene layer from thermal damage during the growth of n-GaN nanorods. Defect-free n-GaN NRs were grown on a highly ordered graphene monolayer on Si without forming any metal-catalyst or droplet seeds. The prominent existence of the undamaged monolayer graphene even after the growth of highly dense n-GaN NRs, as determined using Raman spectroscopy and high-resolution transmission electron microscopy (HR-TEM), facilitated the excellent transport of the generated charge carriers through the photoconductive channel. The highly matched n-GaN NR-graphene hybrid structure exhibited enhancement in the photocurrent along with increased sensitivity and photoresponsivity, which were attributed to the extremely low carrier trap density in the photoconductive channel | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.5, pp.10808 | - |
dc.identifier.doi | 10.1038/srep10808 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.scopusid | 2-s2.0-84934876267 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/11664 | - |
dc.identifier.url | http://www.nature.com/srep/2015/150601/srep10808/full/srep10808.html | - |
dc.identifier.wosid | 000355605500001 | - |
dc.language | 영어 | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Ultraviolet photoconductive devices with an n-GaN nanorodgraphene hybrid structure synthesized by metal-organic chemical vapor deposition | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | FEW-LAYER GRAPHENE | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | EPITAXIAL-GROWTH | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | NUCLEATION | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | FILMS | - |
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