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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Ultraviolet photoconductive devices with an n-GaN nanorodgraphene hybrid structure synthesized by metal-organic chemical vapor deposition

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Title
Ultraviolet photoconductive devices with an n-GaN nanorodgraphene hybrid structure synthesized by metal-organic chemical vapor deposition
Author
Kang, SanMandal, ArjunChu, Jae HwanPark, Ji-HyeonKwon, Soon-YongLee, Cheul-Ro
Issue Date
2015-06
Publisher
NATURE PUBLISHING GROUP
Citation
SCIENTIFIC REPORTS, v.5, pp.10808
Abstract
The superior photoconductive behavior of a simple, cost-effective n-GaN nanorod (NR)-graphene hybrid device structure is demonstrated for the first time. The proposed hybrid structure was synthesized on a Si (111) substrate using the high-quality graphene transfer method and the relatively low-temperature metal-organic chemical vapor deposition (MOCVD) process with a high V/III ratio to protect the graphene layer from thermal damage during the growth of n-GaN nanorods. Defect-free n-GaN NRs were grown on a highly ordered graphene monolayer on Si without forming any metal-catalyst or droplet seeds. The prominent existence of the undamaged monolayer graphene even after the growth of highly dense n-GaN NRs, as determined using Raman spectroscopy and high-resolution transmission electron microscopy (HR-TEM), facilitated the excellent transport of the generated charge carriers through the photoconductive channel. The highly matched n-GaN NR-graphene hybrid structure exhibited enhancement in the photocurrent along with increased sensitivity and photoresponsivity, which were attributed to the extremely low carrier trap density in the photoconductive channel
URI
https://scholarworks.unist.ac.kr/handle/201301/11664
URL
http://www.nature.com/srep/2015/150601/srep10808/full/srep10808.html
DOI
10.1038/srep10808
ISSN
2045-2322
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MSE_Journal Papers
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