Tunnel Junction-Embedded Field-Effect Transistor for Negative Differential Resistance and Its Multi-Valued Logic and Memory Applications
Cited 0 times inCited 0 times in
- Tunnel Junction-Embedded Field-Effect Transistor for Negative Differential Resistance and Its Multi-Valued Logic and Memory Applications
- Shin, Sunhae
- Kim, Kyung Rok
- Issue Date
- Graduate School of UNIST
- I propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn tunnel diode with transistor. The embedded transistors suppress the valley current with transistor off-leakage current level. With various configurations of pn diode and transistor, single or multiple NDR characteristics obtained and each operation principle is explained clearly. Each composed device is analyzed in detail and NDR characteristics are examined device design parameters. In the single NDR case, operation voltage is below 0.5V, which is good at power density. In the multiple NDR case, band-to-band tunneling (BTBT) in tunnel junction provides the first peak, and second peak and valley are generated from the suppression of diode current by off-state transistor. For the digital applications, introduced tri-state voltage transfer circuit makes NDR device take single input operation. Moreover, by using complementary multiple NDR devices, 5-state memory is demonstrated only with four transistors.
- Device Physics
- ; Go to Link
- Appears in Collections:
- Files in This Item:
Tunnel Junction-Embedded Field-Effect Transistor.pdf
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.