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Park, Kibog
Emergent Materials & Devices Lab
Research Interests
  • Semiconductor, Metal Oxide Thin Film, Graphene, Non-Volatile Memory, Quantum Transport, Quantum Computing Device

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Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopy

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dc.contributor.author Park, Kibog ko
dc.contributor.author Pelz, JP ko
dc.contributor.author Grim, J ko
dc.contributor.author Skowronski, M ko
dc.date.available 2015-01-12T03:11:40Z -
dc.date.created 2014-11-10 ko
dc.date.issued 2005-12 ko
dc.identifier.citation APPLIED PHYSICS LETTERS, v.87, no.23, pp.1 - 3 ko
dc.identifier.issn 0003-6951 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/10070 -
dc.description.abstract We show that "single" stacking fault 3C inclusions formed in 4H-SiC p-i-n diodes behave as electron quantum wells (QWs) with the QW energy depth of ∼0.25 eV below 4H-SiC conduction band minimum, by measuring the Schottky barriers on and away from inclusions with ballistic electron emission microscopy (BEEM). The Schottky barrier on the 4H area ([11-20] oriented) is measured to be essentially the same as (0001) plane studied previously, indicating that the interface pinning effects on both crystal faces are almost identical. Additionally, BEEM current amplitude is observed to be very sensitive to subsurface damage induced by polishing. ko
dc.description.statementofresponsibility open -
dc.language 영어 ko
dc.publisher AMER INST PHYSICS ko
dc.title Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopy ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-28544438212 ko
dc.identifier.wosid 000233723200041 ko
dc.type.rims ART ko
dc.description.wostc 9 *
dc.description.scopustc 10 *
dc.date.tcdate 2015-12-28 *
dc.date.scptcdate 2015-11-04 *
dc.identifier.doi 10.1063/1.2138442 ko
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=28544438212 ko
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