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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 3 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 89 | - |
dc.contributor.author | Park, Kibog | - |
dc.contributor.author | Ding, Y. | - |
dc.contributor.author | Pelz, J. P. | - |
dc.contributor.author | Neudeck, P. G. | - |
dc.contributor.author | Trunek, A. J. | - |
dc.date.accessioned | 2023-12-22T09:45:06Z | - |
dc.date.available | 2023-12-22T09:45:06Z | - |
dc.date.created | 2014-11-10 | - |
dc.date.issued | 2006-07 | - |
dc.description.abstract | p-type Schottky barriers in Pt/3C-SiC contacts have been measured using ballistic hole emission microscopy (BHEM) and estimated to be ∼0.06 eV higher than identically prepared Pt/p-type 4H-SiC contacts. This indicates the 3C-SiC valence band maximum (VBM) is ∼0.06 eV below the 4H-SiC VBM, consistent with the calculated ∼0.05 eV type-II valence band offset between these polytypes. We also observe no evidence of an additional VBM in 3C-SiC, which supports the proposal that the second VBM observed in BHEM spectra on 4H-SiC is a crystal-field split VBM located ∼110 meV below the highest VBM. | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.89, no.4, pp.1 - 3 | - |
dc.identifier.doi | 10.1063/1.2218302 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.scopusid | 2-s2.0-33746654213 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/10069 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=33746654213 | - |
dc.identifier.wosid | 000239376500057 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Valence band structure and band offset of 3C- and 4H-SiC studied by ballistic hole emission microscopy | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | ELECTRONIC-PROPERTIES | - |
dc.subject.keywordPlus | 4H | - |
dc.subject.keywordPlus | POLARIZATION | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
dc.subject.keywordPlus | INTERFACES | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | FIELD | - |
dc.subject.keywordPlus | 6H | - |
dc.subject.keywordPlus | HEXAGONAL SIC POLYTYPES | - |
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