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Park, Kibog
Emergent Materials & Devices Lab
Research Interests
  • Semiconductor, Metal Oxide Thin Film, Graphene, Non-Volatile Memory, Quantum Transport, Quantum Computing Device

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Nanometer-resolution measurement and modeling of lateral variations of the effective work function at the bilayer Pt/Al/SiO2 interface

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dc.contributor.author Cai, W. ko
dc.contributor.author Park, Kibog ko
dc.contributor.author Pelz, J.P. ko
dc.date.available 2015-01-12T03:11:28Z -
dc.date.created 2014-11-10 ko
dc.date.issued 2009-10 -
dc.identifier.citation PHYSICAL REVIEW B, v.80, no.16, pp.1 - 6 ko
dc.identifier.issn 2469-9950 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/10068 -
dc.identifier.uri http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=72849131752 ko
dc.description.abstract A ballistic electron emission microscopy (BEEM) comparison of the dependence on gate voltage of the average energy barrier of a metal bilayer Pt/Al/ SiO2 /Si sample and a Pt/ SiO2 /Si sample suggests that the metal/oxide interface of the Pt/Al/ SiO2 /Si sample is laterally inhomogeneous at nm length scales. However, BEEM images of the bilayer sample do not show significantly larger lateral variations than observed on a (uniform) Pt/ SiO2 /Si sample, indicating that any inhomogeneous "patches" of lower-energy barrier height have size smaller than the lateral resolution of BEEM, estimated for these samples to be ∼10nm. Finite element electrostatic simulations of an assumed inhomogeneous interface with nm size patches of different effective work function can fit the experimental data of the bilayer sample much better than an assumed homogenous interface, indicating that the bilayer film is laterally inhomogeneous at the nm scale. ko
dc.description.statementofresponsibility open -
dc.language ENG ko
dc.publisher AMER PHYSICAL SOC ko
dc.subject ELECTRON-EMISSION MICROSCOPY ko
dc.subject TRANSPORT ko
dc.subject CHARGE ko
dc.subject SIO2 ko
dc.title Nanometer-resolution measurement and modeling of lateral variations of the effective work function at the bilayer Pt/Al/SiO2 interface ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-72849131752 ko
dc.identifier.wosid 000271352100097 ko
dc.type.rims ART ko
dc.description.wostc 2 *
dc.description.scopustc 1 *
dc.date.tcdate 2015-12-28 *
dc.date.scptcdate 2015-11-04 *
dc.identifier.doi 10.1103/PhysRevB.80.165322 ko
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