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Park, Kibog
Emergent Materials & Devices Lab
Research Interests
  • Semiconductor, Metal Oxide Thin Film, Graphene, Non-Volatile Memory, Quantum Transport, Quantum Computing Device

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Nanometer-resolution measurement and modeling of lateral variations of the effective work function at the bilayer Pt/Al/SiO2 interface

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Title
Nanometer-resolution measurement and modeling of lateral variations of the effective work function at the bilayer Pt/Al/SiO2 interface
Author
Cai, W.Park, KibogPelz, J.P.
Keywords
ELECTRON-EMISSION MICROSCOPY; TRANSPORT; CHARGE; SIO2
Issue Date
2009-10
Publisher
AMER PHYSICAL SOC
Citation
PHYSICAL REVIEW B, v.80, no.16, pp.1 - 6
Abstract
A ballistic electron emission microscopy (BEEM) comparison of the dependence on gate voltage of the average energy barrier of a metal bilayer Pt/Al/ SiO2 /Si sample and a Pt/ SiO2 /Si sample suggests that the metal/oxide interface of the Pt/Al/ SiO2 /Si sample is laterally inhomogeneous at nm length scales. However, BEEM images of the bilayer sample do not show significantly larger lateral variations than observed on a (uniform) Pt/ SiO2 /Si sample, indicating that any inhomogeneous "patches" of lower-energy barrier height have size smaller than the lateral resolution of BEEM, estimated for these samples to be ∼10nm. Finite element electrostatic simulations of an assumed inhomogeneous interface with nm size patches of different effective work function can fit the experimental data of the bilayer sample much better than an assumed homogenous interface, indicating that the bilayer film is laterally inhomogeneous at the nm scale.
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DOI
10.1103/PhysRevB.80.165322
ISSN
2469-9950
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PHY_Journal Papers
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