There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 130 | - |
dc.citation.startPage | 127 | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 551 | - |
dc.contributor.author | Ali, Ahmed I. | - |
dc.contributor.author | Park, Kibog | - |
dc.contributor.author | Ullah, Amir | - |
dc.contributor.author | Huh, Rock | - |
dc.contributor.author | Kim, Y.S. | - |
dc.date.accessioned | 2023-12-22T03:08:57Z | - |
dc.date.available | 2023-12-22T03:08:57Z | - |
dc.date.created | 2013-12-18 | - |
dc.date.issued | 2014-01 | - |
dc.description.abstract | Pulsed laser deposition (PLD) was used to fabricate La0.01Ba0.99TiO3 (LBTO) thin films on MgO/TiO2/SiO2/Si substrates with and without SrTiO3 (STO) buffer layer. LBTO films deposited on STO layers exhibited enhanced ferroelectricity and decreased leakage current (9 × 10- 7 A/cm2 at 50 kV/cm), conductivity, and Hall mobility, compared to those of LBTO films on MgO substrate. The remanent polarization (Pr) and coercive field (Ec) for LBTO thin films on STO buffered MgO substrate dramatically improved, 36.5 μC/cm2 and ~ 220 kV/cm, compared to those for LBTO thin films on MgO substrate, 3 μC/cm2 and ~ 60 kV/cm. The degradation of Pr and Ec after 105 switching test is less than 0.1% for LBTO thin films on STO buffered MgO substrate. This work demonstrates a route to a lead-free ferroelectric thin film for nonvolatile memories and electro-optic devices. | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.551, pp.127 - 130 | - |
dc.identifier.doi | 10.1016/j.tsf.2013.11.048 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.scopusid | 2-s2.0-84891746171 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/10054 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84891746171 | - |
dc.identifier.wosid | 000329211000024 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Ferroelectric enhancement of La-doped BaTiO3 thin films using SrTiO3 buffer layer | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.