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Park, Kibog
Emergent Materials & Devices Lab
Research Interests
  • Semiconductor, Metal Oxide Thin Film, Graphene, Non-Volatile Memory, Quantum Transport, Quantum Computing Device


Ferroelectric enhancement of La-doped BaTiO3 thin films using SrTiO3 buffer layer

DC Field Value Language Ali, Ahmed I. ko Park, Kibog ko Ullah, Amir ko Huh, Rock ko Kim, Y.S. ko 2015-01-12T03:10:25Z - 2013-12-18 ko 2014-01 ko
dc.identifier.citation THIN SOLID FILMS, v.551, pp.127 - 130 ko
dc.identifier.issn 0040-6090 ko
dc.identifier.uri -
dc.description.abstract Pulsed laser deposition (PLD) was used to fabricate La0.01Ba0.99TiO3 (LBTO) thin films on MgO/TiO2/SiO2/Si substrates with and without SrTiO3 (STO) buffer layer. LBTO films deposited on STO layers exhibited enhanced ferroelectricity and decreased leakage current (9 × 10- 7 A/cm2 at 50 kV/cm), conductivity, and Hall mobility, compared to those of LBTO films on MgO substrate. The remanent polarization (Pr) and coercive field (Ec) for LBTO thin films on STO buffered MgO substrate dramatically improved, 36.5 μC/cm2 and ~ 220 kV/cm, compared to those for LBTO thin films on MgO substrate, 3 μC/cm2 and ~ 60 kV/cm. The degradation of Pr and Ec after 105 switching test is less than 0.1% for LBTO thin films on STO buffered MgO substrate. This work demonstrates a route to a lead-free ferroelectric thin film for nonvolatile memories and electro-optic devices. ko
dc.description.statementofresponsibility close -
dc.language 영어 ko
dc.publisher ELSEVIER SCIENCE SA ko
dc.title Ferroelectric enhancement of La-doped BaTiO3 thin films using SrTiO3 buffer layer ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-84891746171 ko
dc.identifier.wosid 000329211000024 ko
dc.type.rims ART ko
dc.description.wostc 2 *
dc.description.scopustc 2 *
dc.description.scopustc 2 * 2015-12-28 * 2015-11-04 * 2015-11-04 *
dc.identifier.doi 10.1016/j.tsf.2013.11.048 ko
dc.identifier.url ko
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