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Park, Kibog
Emergent Materials & Devices Lab
Research Interests
  • Semiconductor, Metal Oxide Thin Film, Graphene, Non-Volatile Memory, Quantum Transport, Quantum Computing Device

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Photoresponse enhancement of plasmonic terahertz wave detector based on asymmetric silicon MOSFETs with antenna integration

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Title
Photoresponse enhancement of plasmonic terahertz wave detector based on asymmetric silicon MOSFETs with antenna integration
Author
Ryu, Min WooLee, Jeong SeopPark, KibogPark, Wook-KiHan, Seong-TaeKim, Kyung Rok
Issue Date
2014-04
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.4, pp.04EJ05
Abstract
We report the experiments of a plasmonic terahertz (THz) wave detector based on silicon (Si) field-effect transistors (FETs) in the nonresonant sub- THz (0.2 THz) regime. To investigate the effects of the overdamped charge asymmetry on responsivity (RV), a FET structure with the asymmetric source and drain area under the gate has been proposed. RV as a function of gate voltage in Si FET-based detectors integrated with an antenna has been successfully enhanced by the asymmetry ratio (ηa = WD/WS) of gate-overlapped drain width (WD) to source width (WS) in agreement with the nonresonant quasi-plasma wave detection theory. The experimentally measured photoresponse has been enhanced by about 36.2 times on average from various samples according to the 10-fold increase in ηa. The effect of the integrated bow-tie antenna on the performance enhancement has also been estimated as 60-fold at the maximum incident angle for the polarized THz wave source.
URI
https://scholarworks.unist.ac.kr/handle/201301/10051
URL
http://iopscience.iop.org/article/10.7567/JJAP.53.04EJ05/meta;jsessionid=52E97BA62A243B81103A6B8BAEE4C846.c4
DOI
10.7567/JJAP.53.04EJ05
ISSN
0021-4922
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PHY_Journal Papers
EE_Journal Papers
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