dc.citation.endPage |
1053 |
- |
dc.citation.number |
6 |
- |
dc.citation.startPage |
1047 |
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dc.citation.title |
IEICE TRANSACTIONS ON ELECTRONICS |
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dc.citation.volume |
E87-C |
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dc.contributor.author |
Ahn, Hyung Ki |
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dc.contributor.author |
Lim, Kyoohyun |
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dc.contributor.author |
Park, Chan-Hong |
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dc.contributor.author |
Kim, Jae Joon |
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dc.contributor.author |
Kim, Beomsup |
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dc.date.accessioned |
2023-12-22T11:06:10Z |
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dc.date.available |
2023-12-22T11:06:10Z |
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dc.date.created |
2015-01-09 |
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dc.date.issued |
2004-06 |
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dc.description.abstract |
A fully integrated RF front-end for W-CDMA applications including a low noise amplifier, a down conversion mixer, a digitally programmable gain amplifier, an on-chip VCO, and a fractional-N frequency synthesizer is designed using a 0.35-µm CMOS process. A multi-stage ring shaped on-chip LC-VCO exhibiting bandpass characteristics overcomes the limitation of low-Q components in the tank circuits and improves the phase noise performance. The measured phase noise of the on-chip VCO is -134 dBc/Hz at 1 MHz offset. The receiver RF front-end achieves a NF of 3.5 dB, an IIP3 of -16 dBm, and a maximum gain of 80 dB. The receiver consumes 52 mA with a 3-V supply and occupies only 2 mm2 die area with minimal external components. |
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dc.identifier.bibliographicCitation |
IEICE TRANSACTIONS ON ELECTRONICS, v.E87-C, no.6, pp.1047 - 1053 |
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dc.identifier.issn |
1745-1353 |
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dc.identifier.scopusid |
2-s2.0-3042686974 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/10047 |
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dc.identifier.wosid |
000221983000033 |
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dc.language |
영어 |
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dc.publisher |
IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG |
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dc.title |
A Fully Integrated CMOS RF Front-End with On-Chip VCO for W-CDMA Applications |
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dc.type |
Article |
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dc.description.isOpenAccess |
FALSE |
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dc.description.journalRegisteredClass |
scie |
- |