Recently Added Items
NO Title, Author(s), (Publications, Volume Issue, Page, Issu Date)
1 Programming characteristics of phase change random access memory using phase change simulations / Kim, Young-Ta; Hwang, Young-Nam; Lee, Keun-Ho; Lee, Se-Ho; Jeong, Chang-Wook; Ahn, Su-Jin; Yeung, Fai; Koh, Gwan-Hyeob; Jeong, Heong-Sik; Chung, Won-Young; Kim, Tai-Kyung; Park, Young-Kwan; Kim, Ki-Nam; Kong, Jeong-Taek(JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.44, no.4B, pp.2701 - 2705, 2005-04)
2 Switching field distribution in magnetic tunnel junctions with a synthetic antiferromagnetic free layer / Jeong, WC; Park, JH; Koh, GH; Jeong, GT; Jeong, HS; Kim, K(JOURNAL OF APPLIED PHYSICS, v.97, no.10, pp.10C905, 2005-05)
3 Switching characteristics of magnetic tunnel junctions with a synthetic antiferromagnetic free layer / Lee, Yun Ki; Chun, Byong Sun; Kim, Young Keun; Hwang, Injun; Park, Wanjun; Kim, Taewan; Jeong, Won-Cheol; Lee, J.; Jeong, Hong Sik(IEEE TRANSACTIONS ON MAGNETICS, v.41, no.10, pp.2688 - 2690, 2005-10)
4 Enhanced write performance of a 64-Mb phase-change random access memory / Oh, Hyung-rok; Cho, Beak-hyung; Cho, Woo Yeong; Kang, Sangbeom; Choi, Byung-gil; Kim, Hye-jin; Kim, Ki-sung; Kim, Du-eung; Kwak, Choong-keun; Byun, Hyun-geun; Jeong, Gi-tae; Jeong, Hong-sik; Kim, Kinam(IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.41, no.1, pp.122 - 126, 2006-01)
5 Field assisted spin switching in magnetic random access memory / Jeong, W.C.; Park, J.H.; Oh, J.H.; Koh, G.H.; Jeong, G.T.; Jeong, H.S.; Kim, K.(JOURNAL OF APPLIED PHYSICS, v.99, no.8, pp.08H708, 2006-04)
6 Highly reliable ring-type contact for high-density phase change memory / Jeong, Chang-Wook; Ahn, Su-Jin; Hwang, Young-Nam; Song, Yoon-Jong; Oh, Jac-Hee; Lee, Su-Youn; Lee, Se-Ho; Ryoo, Kyung-Chang; Park, Jong-Hyun; Park, Jae-Hyun; Shin, Jac-Min; Yeung, Fai; Jeong, Won-Cheol; Kim, Jeong-In; Koh, Gwan-Hyeob; Jeong, Gi-Tae; Jeong, Hong-Sik; Kim, Kinam(JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, no.4B, pp.3233 - 3237, 2006-04)
7 Phase-change behavior of stoichiometric Ge2Sb2Te5 in phase-change random access memory / Park, Jong-Bong; Park, Gyeong-Su; Baik, Hion-Suck; Lee, Jang-Ho; Jeong, Hongsik; Kim, Kinam(JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, no.3, pp.H139 - H141, 2007-01)
8 A 0.1-mu m 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation / Kang, Sangbeom; Cho, Woo Yeong; Cho, Beak-Hyung; Lee, Kwang-Jin; Lee, Chang-Soo; Oh, Hyung-Rok; Choi, Byung-Gil; Wang, Qi; Kim, Hye-Jin; Park, Mu-Hui; Ro, Yn Hwan; Kim, Suyeon; Ha, Choong-Duk; Kim, Ki-Sung; Kim, Young-Ran; Kim, Du-Eung; Kwak, Choong-Keun; Byun, Hyun-Geun; Jeong, Gitae; Jeong, Hongsik; Kim, Kinam; Shin, YunSueng(IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.42, no.1, pp.210 - 218, 2007-01)
9 Ring contact electrode process for high density phase change random access memory / Ryoo, Kyung-Chang; Song, Yoon Jong; Shin, Jae-Min; Park, Sang-Su; Lim, Dong-Won; Kim, Jae-Hyun; Park, Woon-Ik; Sim, Ku-Ri; Jeong, Ji-Hyun; Kang, Dae-Hwan; Kong, Jun-Hyuck; Jeong, Chang-Wook; Oh, Jae-Hee; Park, Jae-Hyun; Kim, Jeong-In; Oh, Yong-Tae; Kim, Ji-Sun; Eun, Seong-Ho; Lee, Kwang-Woo; Koh, Seong-Pil; Fai, Yung; Koh, Gwan-Hyob; Jeong, Gi-Tae; Jeong, Hong-Sik; Kim, Kinam(JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.46, no.4B, pp.2001 - 2005, 2007-04)
10 Robust two-dimensional stack capacitor technologies for 64 Mbit one-transistor-one-capacitor ferroelectric random access memory / Jung, Ju-Young; Joo, Heung-Jin; Park, Jung-Hoon; Kang, Seuno-Kuk; Kim, Hwi-San; Choi, Do-Yeon; Kim, Jai-Hyun; Lee, Eun-Sun; Hong, Young-Ki; Kim, Hyun-Ho; Jung, Dong-Jin; Kang, Young-Min; Lee, Sung-Yung; Jeong, Hong-Sik; Kim, Kinam(JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.46, no.4B, pp.1934 - 1937, 2007-04)
11 Changes in the electronic structures and optical band gap of Ge2Sb2Te5 and N-doped Ge2Sb2Te5 during phase transition / Kim, YoungKuk; Jeong, K.; Cho, M.-H.; Hwang, Uk; Jeong, H. S.; Kim, Kinam(APPLIED PHYSICS LETTERS, v.90, no.17, pp.171920, 2007-04)
12 Texture formation of GeSbTe thin films prepared by multilayer deposition of modulating constituent elements / Ie, Sang Yub; Bea, Byung Tack; Ahn, Young-kun; Chang, M. Y.; You, D. G.; Cho, M. H.; Jeong, K.; Oh, Jae-Hee; Koh, Gwan-Hyeob; Jeong, Hongsik(APPLIED PHYSICS LETTERS, v.90, no.25, pp.251917, 2007-06)
13 Martensitic transformation in Ge2Sb2Te5 alloy / Zhang, Wei; Jeong, Hong Sik; Song, Se Ahn(ADVANCED ENGINEERING MATERIALS, v.10, no.1-2, pp.67 - 72, 2008-02)
14 Writing current reduction and total set resistance analysis in PRAM / Kim, J. I.; Oh, Y. T.; Park, S. S.; Kim, J. S.; Shin, J. M.; Park, Jaehyun; Fai, Y.; Koh, G. H.; Jeong, G. T.; Jeong, H. S.; Kim, Kinam; Jeong, C. W.; Kang, D. H.; Ha, D. W.; Song, Y. J.; Oh, J. H.; Kong, J. H.; Yoo, J. H.; Park, J. H.; Ryoo, K. C.; Lim, D. W.(SOLID-STATE ELECTRONICS, v.52, no.4, pp.591 - 595, 2008-04)
15 In situ dynamic HR-TEM and EELS study on phase transitions of Ge2Sb2Te5 chalcogenides / Song, Se Ahn; Zhang, Wei; Jeong, Hong Sik; Kim, Jin-Gyu; Kim, Youn-Joong(ULTRAMICROSCOPY, v.108, no.11, pp.1408 - 1419, 2008-10)
16 Chemical state and atomic structure of Ge2Sb2Te5 system for nonvolatile phase-change random access memory / Jung, Min-Cherl; Kim, Ki-Hong; Lee, Young-Mi; Eom, Jae-Hyeon; Im, Jino; Yoon, Young-Gui; Ihm, Jisoon; Song, Se Ahn; Jeong, Hong-Sik; Shin, Hyun-Joon(JOURNAL OF APPLIED PHYSICS, v.104, no.7, pp.074911, 2008-10)
17 Hydrogen and Stress-Induced De-lamination in an IrO2 Layer of Ferroelectric Random Access Memories / Kim, Jai-Hyun; Jung, Dong Jin; Kim, Hyun-Ho; Hong, Young Ki; Lee, Eun Sun; Kim, Song Yi; Ko, Han Kyoung; Jung, Ju Young; Choi, Do Yeon; Kang, SeungKuk; Kim, Heesan; Jung, Won Woong; Kang, Jin Young; Kang, Young Min; Lee, Sungyung; Jeong, Hongsik(JAPANESE JOURNAL OF APPLIED PHYSICS, v.48, no.4, pp.04C066, 2009-04)
18 Electronic Structure of Te/Sb/Ge and Sb/Te/Ge Multi Layer Films Using Photoelectron Spectroscopy / Baeck, Ju Heyuck; Ann, Young-kun; Jeong, Kwang-Ho; Cho, Mann-Ho; Ko, Dae-Hong; Oh, Jae-Hee; Jeong, Hongsik(JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.131, no.38, pp.13634 - 13638, 2009-09)
19 Temperature-dependent high-resolution X-ray photoelectron spectroscopic study on Ge1Sb2Te4 / Lee, Y. M.; Jung, M-C.; Shin, H. J.; Kim, K.; Song, S. A.; Jeong, H. S.; Ko, C.; Han, M.(THIN SOLID FILMS, v.518, no.20, pp.5670 - 5672, 2010-08)
20 Nitrogen contribution to N-doped GeTe (N: 8.4 at.%) in the structural phase transition / Lee, Y. M.; Shin, H. J.; Choi, S. J.; Oh, J. H.; Jeong, H. S.; Kim, K.; Jung, M. -C.(CURRENT APPLIED PHYSICS, v.11, no.3, pp.710 - 713, 2011-05)
21 Understanding atomic structures of amorphous C-doped Ge2Sb2Te5 phase-change memory materials / Borisenko, Konstantin B.; Chen, Yixin; Cockayne, David J. H.; Song, Se Ahn; Jeong, Hong Sik(ACTA MATERIALIA, v.59, no.11, pp.4335 - 4342, 2011-06)
22 Cost-Effective Silicon Vertical Diode Switch for Next-Generation Memory Devices / Lee, Kong-Soo; Han, Jae-Jong; Lim, Hanjin; Nam, Seokwoo; Chung, Chilhee; Jeong, Hong-Sik; Park, Hyunho; Jeong, Hanwook; Choi, Byoungdeog(IEEE ELECTRON DEVICE LETTERS, v.33, no.2, pp.242 - 244, 2012-02)
23 Understanding on the current-induced crystallization process and faster set write operation thereof in non-volatile phase change memory / Kang, Dae-Hwan; Kim, Nan Young; Jeong, Hongsik; Cheong, Byung-ki(APPLIED PHYSICS LETTERS, v.100, no.6, pp.063508, 2012-02)
24 Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics / Ryoo, Kyung-Chang; Oh, Jeong-Hoon; Jung, Sunghun; Jeong, Hongsik; Park, Byung-Gook(JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.4, pp.04DD14, 2012-04)
25 Reset Current Reduction with Excellent Filament Controllability by Using Area Minimized and Field Enhanced Unipolar Resistive Random Access Memory Structure / Ryoo, Kyung-Chang; Oh, Jeong-Hoon; Jung, Sunghun; Jeong, Hongsik; Park, Byung-Gook(JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.4, pp.04DD07, 2012-04)
26 Microstructural evolution and corrosion behaviour of thermally aged dissimilar metal welds of low-alloy steel and nickel-based alloy / Choi, Kyoung Joon; Yoo, Seung Chang; Kim, Seunghyun; Kim, Taeho; Ham, Junhyuk; Lee, Jeonghyeon; Kim, Ji Hyun(CORROSION SCIENCE, v.153, pp.138 - 149, 2019-06)
27 A Study on the Relationship between Electronic Structure and Corrosion Characteristics of Zirconium Alloy in High-temperature Hydrogenated Water / Kim, Taeho; Kim, Seunghyun; Lee, Yunju; Kim, Namdong; Bahn, Chi Bun; Couet, Adrien; Kim, Ji Hyun(CORROSION SCIENCE, 2019-06)
28 Novel Protruded-Shape Unipolar Resistive Random Access Memory Structure for Improving Switching Uniformity through Excellent Conductive Filament Controllability / Ryoo, Kyung-Chang; Kim, Sungjun; Oh, Jeong-Hoon; Jung, Sunghun; Jeong, Hongsik; Park, Byung-Gook(JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.6, pp.06FE06, 2012-06)
29 Interface-Modified Unipolar Resistive Random Access Memory (RRAM) Structure for Low-Power Application / Ryoo, Kyung-Chang; Oh, Jeong-Hoon; Jung, Sunghun; Jeong, Hongsik; Park, Byung-Gook(JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.7, pp.5263 - 5269, 2012-07)
30 Ultrafast phase change and long durability of BN-incorporated GeSbTe / Jang, Moon Hyung; Park, Seung Jong; Ahn, Min; Jeong, Kwang Sik; Park, Sung Jin; Cho, Mann-Ho; Song, Jae Yong; Jeong, Hongsik(JOURNAL OF MATERIALS CHEMISTRY C, v.3, no.8, pp.1707 - 1715, 2015-02)
31 Emulation of spike-timing dependent plasticity in nano-scale phase change memory / Kang, Dae-Hwan; Jun, Hyun-Goo; Ryoo, Kyung-Chang; Jeong, Hongsik; Sohn, Hyunchul(NEUROCOMPUTING, v.155, pp.153 - 158, 2015-05)
32 Laser irradiation-induced modification of the amorphous phase in GeTe films: the role of intermediate Ge-Te bonding in the crystallization mechanism / Park, Seung Jong; Park, Hanjin; Jang, Moon Hyung; Ahn, Min; Yang, Won Jun; Han, Jeong Hwa; Jeong, Hong-Sik; Kim, Cheol-Woon; Kwon, Young-Kyun; Cho, Mann-Ho(JOURNAL OF MATERIALS CHEMISTRY C, v.3, no.36, pp.9393 - 9402, 2015-09)
33 Crystallinity of silicon films grown on carbon fibers by very high frequency plasma enhanced chemical vapor deposition / Chae, Eulyong; Lee, Kyumin; Lee, Hwan; Ko, Daehong; Jeong, Hongsik; Sohn, Hyunchul(THIN SOLID FILMS, v.591, pp.137 - 142, 2015-09)
34 Evolution of the surface state in Bi2Se2Te thin films during phase transition / Choi, Hyejin; Kim, Tae Hyeon; Chae, Jimin; Baeck, Juheyuck; Kee, Chul-Sik; Jeong, Kwang-Ho; Jeong, Hong-Sik; Kang, Chul; Cho, Mann-Ho(NANOSCALE, v.7, no.36, pp.14924 - 14936, 2015-09)
35 Effect of the Thermal Conductivity on Resistive Switching in GeTe and Ge2Sb2Te5 Nanowires / Park, Sungjin; Park, Dambi; Jeong, Kwangsik; Kirn, Taeok; Park, SeungJong; Ahn, Min; Yang, Won Jun; Han, Jeong Hwa; Jeong, Hong Sik; Jeon, Seong Gi; Song, Jae Yong; Cho, Mann-Ho(ACS APPLIED MATERIALS & INTERFACES, v.7, no.39, pp.21819 - 21827, 2015-10)
36 Thermal and Electrical Conduction of Single-crystal Bi2Te3 Nanostructures grown using a one step process / Park, Dambi; Park, Sungjin; Jeong, Kwangsik; Jeong, Hong-Sik; Song, Jea Yong; Cho, Mann-Ho(SCIENTIFIC REPORTS, v.6, pp.19132, 2016-01)
37 Modeling of data retention statistics of phase-change memory with confined- and mushroom-type cells / Kwon, Yongwoo; Park, Byoungnam; Yang, Heesun; Hwang, Jin-Ha; Kang, Dae-Hwan; Jeong, Hongsik; Song, Yunheub(MICROELECTRONICS RELIABILITY, v.63, pp.284 - 290, 2016-08)
38 Investigation of an erasing method for synaptic behaviour in a phase change device using Ge1Cu2Te3 (GCT) / An, J. S.; Choi, C. M.; Shindo, Y.; Sutou, Y.; Jeong, H. S.; Song, Y. H.(ELECTRONICS LETTERS, v.52, no.18, pp.1514 - 1515, 2016-09)
39 Effect of number of laser pulses on p(+)/n silicon ultra-shallow junction formation during non-melt ultra-violet laser thermal annealing / Jung, Sang Min; Park, Chul Jin; Jeong, Hongsik; Shin, Moo Whan(MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.60, pp.34 - 39, 2017-03)
40 Evolution of crystal structures in GeTe during phase transition / Jeong, Kwangsik; Park, Seungjong; Park, Dambi; Ahn, Min; Han, Jeonghwa; Yang, Wonjun; Jeong, Hong-Sik; Cho, Mann-Ho(SCIENTIFIC REPORTS, v.7, pp.955, 2017-04)
41 Memristor devices for neural networks / Jeong, Hongsik; Shi, Luping(JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.52, no.2, pp.023003, 2019-01)
42 Engineering the lva operon and Optimization of Culture Conditions for Enhanced Production of 4-Hydroxyvalerate from Levulinic Acid in Pseudomonas putida KT2440 / Sathesh-Prabu, Chandran; Lee, Sung Kuk(JOURNAL OF AGRICULTURAL AND FOOD CHEMISTRY, v.67, no.9, pp.2540 - 2546, 2019-03)
43 Exploring Cycle-to-Cycle and Device-to-Device Variation Tolerance in MLC Storage-Based Neural Network Training / Lee, Jung-Hoon; Jeong, Hongsik; Lim, Dong-Hyeok; Ma, Huimin; Shi, Luping(IEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.5, pp.2172 - 2178, 2019-05)
44 Sparse and robust portfolio selection via semi-definite relaxation / Lee, Yongjae; Kim, Min Jeong; Kim, Jang Ho; Jang, Ju Ri; Kim, Woo Chang(JOURNAL OF THE OPERATIONAL RESEARCH SOCIETY, 2019-07)
45 TEMPERATURE AND SIZE DEPENDENT EXCITONIC RELAXATION PROCESS IN GAAS/ALGAAS QUANTUM-WELLS / Jeong, Hongsik; Lee, In-Ja; Seo, Jung-Chul; Lee, Minyung; Kim, Dongho; Park, Seong-Ju; Park, Seung-Han; Kim, Ung(SOLID STATE COMMUNICATIONS, v.85, no.2, pp.111 - 114, 1993-01)
46 Effect of lattice contraction on the Raman shifts of CdSe quantum dots in glass matrices / Hwang, Young-Nam; Shin, Sanghun; Park, Hong Lee; Park, Seung-Han; Kim, Ung; Jeong, Hong Sik; Shin, Eun-joo; Kim, Dongho(PHYSICAL REVIEW B, v.54, no.21, pp.15120 - 15124, 1996-12)
47 A 2.5-V, 333-Mb/s/pin, 1-Gbit, double-data-rate synchronous DRAM / Yoon, Hongil; Cha, Gi-Won; Yoo, Changsik; Kim, Nam-Jong; Kim, Keum-Yong; Lee, Chang Ho; Lim, Kyu-Nam; Lee, Kyuchan; Jeon, Jun-Young; Jung, Tae Sung; Jeong, Hongsik; Chung, Tae-Young; Kim, Kinam; Cho, Soo In(IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.34, no.11, pp.1589 - 1599, 1999-11)
48 A cost effective embedded DRAM integration for high density memory and high performance logic using 0.15 mu m technology node and beyond / Ha, Daewon; Shin, Dongwon; Koh, Gwan-Hyeob; Lee, Jaegu; Lee, Sanghyeon; Ahn, Yong-Seok; Jeong, Hongsik; Chung, Taeyoung; Kim, Kinam(IEEE TRANSACTIONS ON ELECTRON DEVICES, v.47, no.7, pp.1499 - 1506, 2000-07)
49 A process integration of high-performance 64-kb MRAM / Kim, H.J.; Jeong, W.C.; Koh, K.H.; Jeong, G.T.; Park, J.H.; Lee, S.Y.; Oh, J.H.; Song, I.H.; Jeong, H.S.; Kim, K.(IEEE TRANSACTIONS ON MAGNETICS, v.39, no.5, pp.2851 - 2853, 2003-09)
50 A new reference signal generation method for MRAM using a 90-degree rotated MTJ / Jeong, WC; Kim, HJ; Park, JH; Jeong, CW; Lee, EY; Oh, JH; Jeong, GT; Koh, GH; Koo, HC; Lee, SH; Lee, SY; Shin, JM; Jeong, HS; Kim, K(IEEE TRANSACTIONS ON MAGNETICS, v.40, no.4, pp.2628 - 2630, 2004-07)

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