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Comparison of the self-cleaning effects and electrical characteristics of BeO and Al2O3 deposited as an interface passivation layer on GaAs MOS devices File

Yum, J. H. , Akyol, T. , Ferrer, D. A. , Lee, J. C. , Banerjee, S. K. , Lei, M. , Downer, M. , Hudnall, Todd. W. , Bielawski, C. W. , Bersuker, G.

Article Issue Date2011-11 View78
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