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Enhanced Nonvolatile Electrochemical Random-Access Memory and Artificial Synapse Characteristics through Oxygen Ion-Exchange Engineering in an Atomic-Layer-Deposited HfO2-x Gate Insulator and a Zinc Oxide Channel Layer File

Han, Jimin , Noh, Taeyun , Jeong, Boyoung , Chung, Peter Hayoung , Park, Garam , Lee, Min-Hyun , Kim, Yumin , Yoon, Tae-Sik

Article Issue Date2025-06 View71
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